Справочник MOSFET. AM50P03-09D

 

AM50P03-09D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM50P03-09D
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 61 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 437 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AM50P03-09D

 

 

AM50P03-09D Datasheet (PDF)

 ..1. Size:288K  analog power
 am50p03-09d.pdf

AM50P03-09D AM50P03-09D

Analog Power AM50P03-09DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = -10V -61 Low thermal impedance -3013 @ VGS = -4.5V -51 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 8.1. Size:139K  analog power
 am50p02-16d.pdf

AM50P03-09D AM50P03-09D

Analog Power AM50P02-16DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 18 @ VGS = -4.5V 44converters and power management in portable and -20battery-powered prod

 8.2. Size:291K  analog power
 am50p04-16pcfm.pdf

AM50P03-09D AM50P03-09D

Analog Power AM50P04-16PCFMP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)16 @ VGS = -10V -50 Low thermal impedance -4028 @ VGS = -4.5V -38 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE M

 8.3. Size:66K  analog power
 am50p04-20d.pdf

AM50P03-09D AM50P03-09D

Analog Power AM50P04-20DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 20 @ VGS = -10V 41converters and power management in portable and -40battery-powered produ

 8.4. Size:287K  analog power
 am50p06-15d.pdf

AM50P03-09D AM50P03-09D

Analog Power AM50P06-15DP-Channel 60-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17 @ VGS = -10V -44 Low thermal impedance -6023 @ VGS = -4.5V -38 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

 8.5. Size:139K  analog power
 am50p02-09d.pdf

AM50P03-09D AM50P03-09D

Analog Power AM50P02-09DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management 9 @ VGS = -4.5V 18circuitry. Typical applications are PWMDC-DC -20converters, power management i

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History: IXFQ12N80P

 

 
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