Справочник MOSFET. AM60N10-70P

 

AM60N10-70P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM60N10-70P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 83 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.078 Ohm
   Тип корпуса: TO-220AB
 

 Аналог (замена) для AM60N10-70P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AM60N10-70P Datasheet (PDF)

 ..1. Size:288K  analog power
am60n10-70p.pdfpdf_icon

AM60N10-70P

Analog Power AM60N10-70PN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V Low thermal impedance 10051a92 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 0.1. Size:271K  analog power
am60n10-70pcfm.pdfpdf_icon

AM60N10-70P

Analog Power AM60N10-70PCFMN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10Vconverters and power management in portable and 10051a92 @ VGS = 4.5V

 0.2. Size:1371K  cn vbsemi
am60n10-70pc.pdfpdf_icon

AM60N10-70P

AM60N10-70PCwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE M

 6.1. Size:61K  analog power
am60n10-13d.pdfpdf_icon

AM60N10-70P

Analog Power AM60N10-13DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = 10V 51converters and power management in portable and 10014 @ VGS = 5.5V 49bat

Другие MOSFET... AM5922N , AM5931P , AM5932N , AM60N02-09D , AM60N02-10D , AM60N03-09D , AM60N04-12D , AM60N10-13D , 10N60 , AM60N10-70PCFM , AM60P04-10D , AM6378 , AM6401 , AM6411P , AM6415 , AM6441P , AM6520C .

History: IXTR68P20T | HGB046NE6AL | IXTJ4N150 | APM8010KC | 7N10Z | IPP60R380C6 | AP2C018LM

 

 
Back to Top

 


 
.