Справочник MOSFET. IRFH7921PBF

 

IRFH7921PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFH7921PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.3 nC
   trⓘ - Время нарастания: 7.6 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: PQFN

 Аналог (замена) для IRFH7921PBF

 

 

IRFH7921PBF Datasheet (PDF)

 ..1. Size:254K  international rectifier
irfh7921pbf.pdf

IRFH7921PBF
IRFH7921PBF

PD - 97335IRFH7921PbFHEXFET Power MOSFETApplicationsl High Frequency Point-of-Load Synchronous BuckVDSS RDS(on) maxQgConverter for Applications in Neworking &Computing Systems8.5m30V @VGS = 10V9.3nCl Optimized for Control FET ApplicationsBenefitsSl Very low RDS(ON) at 4.5V VGSSDl Low Gate ChargeSl Fully Characterized Avalanche Voltage andDG Cur

 8.1. Size:288K  1
irfh7914trpbf.pdf

IRFH7921PBF
IRFH7921PBF

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-

 8.2. Size:260K  1
irfh7934trpbf.pdf

IRFH7921PBF
IRFH7921PBF

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L

 8.3. Size:249K  international rectifier
irfh7914pbf.pdf

IRFH7921PBF
IRFH7921PBF

PD - 97336IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSDl Low Gate ChargeSl Fully Characterized Avalanche Voltage andDG Current

 8.4. Size:266K  international rectifier
irfh7936pbf.pdf

IRFH7921PBF
IRFH7921PBF

PD -97337AIRFH7936PbFApplications HEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated4.8m@VGS = 10V30V 17nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Teste

 8.5. Size:272K  international rectifier
irfh7932pbf.pdf

IRFH7921PBF
IRFH7921PBF

PD - 96140AIRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested

 8.6. Size:310K  international rectifier
irfh7934pbf.pdf

IRFH7921PBF
IRFH7921PBF

PD -97151IRFH7934PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) max Qgused for Notebook Processor Powerl Control MOSFET for Isolated DC-DC30V 3.5m @VGS = 10V 20nCConverters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100%

 8.7. Size:525K  international rectifier
irfh7911pbf.pdf

IRFH7921PBF
IRFH7921PBF

PD - 97427AIRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m:(@VGS = 10V)Qg (typical)8.3 34nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low char

 8.8. Size:288K  infineon
irfh7914pbf.pdf

IRFH7921PBF
IRFH7921PBF

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-

 8.9. Size:316K  infineon
irfh7932pbf.pdf

IRFH7921PBF
IRFH7921PBF

IRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested for RGDl

 8.10. Size:260K  infineon
irfh7934pbf.pdf

IRFH7921PBF
IRFH7921PBF

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L

 8.11. Size:315K  infineon
irfh7911pbf.pdf

IRFH7921PBF
IRFH7921PBF

IRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m(@VGS = 10V)Qg (typical)8.3 34 nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low charge control MOSF

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