Справочник MOSFET. IRFH7934PBF

 

IRFH7934PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFH7934PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20 nC
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 623 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: PQFN5X6

 Аналог (замена) для IRFH7934PBF

 

 

IRFH7934PBF Datasheet (PDF)

 ..1. Size:310K  international rectifier
 irfh7934pbf.pdf

IRFH7934PBF IRFH7934PBF

PD -97151IRFH7934PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) max Qgused for Notebook Processor Powerl Control MOSFET for Isolated DC-DC30V 3.5m @VGS = 10V 20nCConverters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100%

 ..2. Size:260K  infineon
 irfh7934pbf.pdf

IRFH7934PBF IRFH7934PBF

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L

 6.1. Size:260K  1
 irfh7934trpbf.pdf

IRFH7934PBF IRFH7934PBF

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L

 7.1. Size:266K  international rectifier
 irfh7936pbf.pdf

IRFH7934PBF IRFH7934PBF

PD -97337AIRFH7936PbFApplications HEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated4.8m@VGS = 10V30V 17nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Teste

 7.2. Size:272K  international rectifier
 irfh7932pbf.pdf

IRFH7934PBF IRFH7934PBF

PD - 96140AIRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested

 7.3. Size:316K  infineon
 irfh7932pbf.pdf

IRFH7934PBF IRFH7934PBF

IRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested for RGDl

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