IRFH8325PBF
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFH8325PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.6
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 21
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 16
ns
Cossⓘ - Выходная емкость: 503
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005
Ohm
Тип корпуса:
PQFN5X6
- подбор MOSFET транзистора по параметрам
IRFH8325PBF
Datasheet (PDF)
..1. Size:239K international rectifier
irfh8325pbf.pdf 

IRFH8325PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 5.0(@VGS = 10V)m(@VGS = 4.5V)7.2Qg typ15 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
7.1. Size:232K international rectifier
irfh8321.pdf 

IRFH8321PbFVDS 30 VHEXFET Power MOSFETVgs max V 20RDS(on) max 4.9(@VGS = 10V)m(@VGS = 4.5V) 6.8Qg typ. 19.4 nCID 25 APQFN 5X6 mm(@Tc(Bottom) = 25C)ApplicationsSynchronous MOSFET for high frequency buck convertersFeatures BenefitsLow Thermal Resistance to PCB (
7.2. Size:263K international rectifier
irfh8324pbf.pdf 

IRFH8324PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 4.1(@VGS = 10V)m(@VGS = 4.5V)6.3Qg typ.14 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.1. Size:239K 1
irfh8318trpbf.pdf 

IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.2. Size:259K 1
irfh8311trpbf.pdf 

IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.3. Size:360K international rectifier
irfh8307.pdf 

StrongIRFET IRFH8307PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 1.3 m(@ VGS = 10V) Qg (typical) 50 nC Rg (typical) 1.3 ID 100 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters Features Benefits Low RDSon (
8.4. Size:310K international rectifier
irfh8311.pdf 

IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.5. Size:236K international rectifier
irfh8334pbf-1.pdf 

IRFH8334PbF-1HEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 9.0(@VGS = 10V)m(@VGS = 4.5V)13.5Qg typ.7.1 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures BenefitsIndustry-standard pinout PQFN 5 x 6mm Package Multi-Vendor CompatibilityCompatible with Existing Surface Mou
8.6. Size:226K international rectifier
irfh8337pbf.pdf 

PD - 97646CIRFH8337PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 12.8(@VGS = 10V)m(@VGS = 4.5V)19.9Qg typ.4.7 nCPQFN 5X6 mmID 16.2 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.7. Size:248K international rectifier
irfh8316.pdf 

IRFH8316PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 2.95(@VGS = 10V)m(@VGS = 4.5V)4.30Qg typ30.0 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.8. Size:298K international rectifier
irfh8334pbf.pdf 

IRFH8334PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 9.0(@VGS = 10V)m(@VGS = 4.5V)13.5Qg typ.7.1 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.9. Size:528K international rectifier
irfh8303.pdf 

StrongIRFET IRFH8303PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 1.10 mQg (typical) 58 nC RG (typical) 1.0 ID 100 A(@TC (Bottom) = 25C) PQFN 5 x 6 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low RDS(ON) ( 1.10 m) Lower Conduction Losses Low Thermal Resistance to PCB (
8.10. Size:239K international rectifier
irfh8318pbf.pdf 

IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.11. Size:312K international rectifier
irfh8330pbf.pdf 

IRFH8330PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 6.6(@VGS = 10V)m(@VGS = 4.5V)9.9Qg typ.9.3 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck converters Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.12. Size:259K international rectifier
irfh8311pbf.pdf 

IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
8.13. Size:558K infineon
irfh8303pbf.pdf 

StrongIRFET IRFH8303PbF VDSS 30 V RDS(on) max 1.10 mQg (typical) 58 nC RG (typical) 1.0 ID 100 A(@TC (Bottom) = 25C) PQFN 5 x 6 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low RDS(ON) ( 1.10 m) Lower Conduction Losses Low Thermal Resistance to PCB (
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History: IXTC96N25T
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