IRFHM8337 - параметры транзистора MOSFET, его аналоги, datasheet

IRFHM8337 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: IRFHM8337
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5.4 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 171 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0124 Ohm
   Тип корпуса: PQFN3.3X3.3

Аналог (замена) для IRFHM8337

IRFHM8337 Datasheet (PDF)

..1. Size:651K international rectifier
irfhm8337.pdf

IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 12.4(@ VGS = 10V) m(@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A(@TC = 25C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (

6.1. Size:246K international rectifier
irfhm8334.pdf

IRFHM8334TRPbFVDS 30 V HEXFET Power MOSFETVGS max V 20RDS(on) max 9.0(@VGS = 10V) m(@VGS = 4.5V) 13.5Qg typ. 7.1 nCID PQFN 3.3 X 3.3 mm25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures BenefitsLow Thermal Resistance to PCB (

6.2. Size:669K international rectifier
irfhm8330.pdf

IRFHM8330PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.6G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy

7.1. Size:593K 1
irfhm8329trpbf.pdf

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

7.2. Size:532K 1
irfhm830trpbf.pdf

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

7.3. Size:243K international rectifier
irfhm830d.pdf

PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin

7.4. Size:655K international rectifier
irfhm8326.pdf

IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

7.5. Size:639K international rectifier
irfhm8329.pdf

7.6. Size:298K international rectifier
irfhm8363pbf.pdf

IRFHM8363PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max G14.9 SG(@VGS = 10V)m SDD(@VGS = 4.5V)20.4DDDDQg typ6.7 nCPQFN Dual 3.3X3.3 mmID 10 A(@Tc(Bottom) = 25C)Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switchesFeatures and BenefitsFeatures BenefitsLow

7.7. Size:629K international rectifier
irfhm8342.pdf

IRFHM8342TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 16(@ VGS = 10V) m(@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (

7.8. Size:229K international rectifier
irfhm830pbf.pdf

PD - 97547AIRFHM830PbFHEXFET Power MOSFETVDS30 VRDS(on) max 3.8 m D 5 4 G(@VGS = 10V)D 6 3 SQg (typical)15nCD 7 2 SRG (typical)2.5 D 8 1 S3.3mm x 3.3mm PQFNID 40 A(@Tc(Bottom) = 25C)Applications Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsFeatures BenefitsLow RDSon (

7.9. Size:256K international rectifier
irfhm831pbf.pdf

PD -97539AIRFHM831PbFHEXFET Power MOSFETVDS30 VD 5 4 GRDS(on) max 7.8 m(@VGS = 10V) D 6 3 SD 7 2 SQg (typical) 7.3nCD 8 1 SRG (typical) 0.5ID PQFN 3.3mm x 3.3mm40 A(@Tc(Bottom) = 25C)Applications Control MOSFET for Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7.3nC) Lower Switching LossesLow Thermal Resistance to PC

7.10. Size:243K international rectifier
irfhm830dpbf.pdf