IXFH14N100 - аналоги, параметры транзистора - Справочник транзисторов

IXFH14N100 даташит

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VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous

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7.2. Size:173K ixys
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Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

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ixfa14n60p ixfh14n60p ixfp14n60p.pdf pdf_icon

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S (TAB) VGS Continuous 30 V V