Справочник MOSFET. AM7460N

 

AM7460N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM7460N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: DFN5X6
     - подбор MOSFET транзистора по параметрам

 

AM7460N Datasheet (PDF)

 ..1. Size:318K  analog power
am7460n.pdfpdf_icon

AM7460N

Analog Power AM7460NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = 10V12 Low thermal impedance 6036 @ VGS = 4.5V10 Fast switching speed Typical Applications: DFN5X6-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOT

 9.1. Size:312K  analog power
am7463p.pdfpdf_icon

AM7460N

Analog Power AM7463PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = -10V -17 Low thermal impedance -6016 @ VGS = -4.5V -15 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 9.2. Size:371K  analog power
am7462n.pdfpdf_icon

AM7460N

Analog Power AM7462NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V13 Low thermal impedance 6026 @ VGS = 4.5V12 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:179K  analog power
am7464n.pdfpdf_icon

AM7460N

Analog Power AM7464NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 6.460battery-powered products such a

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF7811AVPBF-1 | SIHG47N60S | US5U2 | HGI110N08AL | IRFPC60 | 3N60G | 9N95

 

 
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