Справочник MOSFET. AM90N08-10B

 

AM90N08-10B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM90N08-10B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 471 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

AM90N08-10B Datasheet (PDF)

 ..1. Size:317K  analog power
am90n08-10b.pdfpdf_icon

AM90N08-10B

Analog Power AM90N08-10BN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11 @ VGS = 10V Low thermal impedance 8090a13 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

 6.1. Size:317K  analog power
am90n08-04b.pdfpdf_icon

AM90N08-10B

Analog Power AM90N08-04BN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.5 @ VGS = 10V Low thermal impedance 8090a6 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

 6.2. Size:324K  analog power
am90n08-08p.pdfpdf_icon

AM90N08-10B

Analog Power AM90N08-08PN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11 @ VGS = 10V Low thermal impedance 8090a13 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

 6.3. Size:324K  analog power
am90n08-05p.pdfpdf_icon

AM90N08-10B

Analog Power AM90N08-05PN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)5.5 @ VGS = 10V Low thermal impedance 8090a6.5 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KIA2N60H-220 | MC11N005 | UTT80N06 | JCS5N50CT | NCEP026N10F | NVMFS5C628N | SI7913DN

 

 
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