Справочник MOSFET. AM90N20-78B

 

AM90N20-78B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM90N20-78B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 222 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.078 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

AM90N20-78B Datasheet (PDF)

 ..1. Size:316K  analog power
am90n20-78b.pdfpdf_icon

AM90N20-78B

Analog Power AM90N20-78BN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V Low thermal impedance 20090a92 @ VGS = 6V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

 6.1. Size:285K  analog power
am90n20-40p.pdfpdf_icon

AM90N20-78B

Analog Power AM90N20-40PN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)40 @ VGS = 10V Low thermal impedance 20070a46 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuit

 9.1. Size:312K  analog power
am90n06-04m2b.pdfpdf_icon

AM90N20-78B

Analog Power AM90N06-04m2BN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)4.2 @ VGS = 10V Low thermal impedance 6090a4.8 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 9.2. Size:102K  analog power
am90n10-14pcfm.pdfpdf_icon

AM90N20-78B

Analog Power AM90N10-14PCFMN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 16 @ VGS = 10Vconverters and power management in portable and 10087a19 @ VGS = 5.5Vb

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TSM4944DCS | AP2306CGN-HF | SWHA13N65K2 | IRHYS597034CM | AFN4134W | APTC90SKM60CT1G | PNMTO600V5

 

 
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