STN3446 - Даташиты. Аналоги. Основные параметры

STN3446STN3446STN3446STN3446N Channel Enhancement Mode MOSFET5.3ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3446 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo

STN3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

STN3400A 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m(typ.)@VGS =2.5V technology to provide excellent RDS

STN3404 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

STN3406 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

STN3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m(typ.)@VGS =2.5V provide excellent RDS(

STN3456STN3456STN3456STN3456N Channel Enhancement Mode MOSFET6.0ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3456 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo