STN4412. Аналоги и основные параметры

Наименование производителя: STN4412

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 240 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: SOP-8

Аналог (замена) для STN4412

- подборⓘ MOSFET транзистора по параметрам

 

STN4412 даташит

 ..1. Size:806K  stansontech
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STN4412

STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

 8.1. Size:958K  stansontech
 stn4416.pdf pdf_icon

STN4412

STN4416 STN4416 STN4416 STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f

 9.1. Size:356K  stansontech
 stn4402.pdf pdf_icon

STN4412

STN4402 STN4402 STN4402 STN4402 N Channel Enhancement Mode MOSFET 12A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f

 9.2. Size:853K  stansontech
 stn4438.pdf pdf_icon

STN4412

STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STN410D, STN4110, STN4130, STN4186D, STN4189D, STN4346, STN4392, STN4402, IRFP460, STN4416, STN4426, STN442D, STN4438, STN4440, STN4480, STN4488L, STN4526