STN4828 - описание и поиск аналогов

 ..1. Size:506K  stansontech
 stn4828.pdf 

STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook compu

 ..2. Size:952K  cn vbsemi
 stn4828.pdf 

STN4828 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

 8.1. Size:508K  stansontech
 stn4822.pdf 

STN4822 STN4822 STN4822 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURA

 8.2. Size:681K  stansontech
 stn4826.pdf 

STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook comput

 9.1. Size:374K  semtron
 stn4842.pdf 

STN4842 30V Dual N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN4842 is the Dual N-Channel logic 30V / 7.8A, RDS(ON) =16m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V / 5.8A, RDS(ON) =24m (typ.)@VGS =4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology to pr

 9.2. Size:524K  stansontech
 stn4850.pdf 

STN4850 STN4850 STN4850 STN4850 N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited

 9.3. Size:544K  stansontech
 stn484d.pdf 

STN484D N Channel Enhancement Mode MOSFET 30.0A DESCRIPTION STN484D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN484D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o