STP1013 - описание и поиск аналогов

 ..1. Size:177K  stansontech
 stp1013.pdf 

STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage appl

 9.1. Size:735K  st
 stp10ln80k5.pdf 

STP10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D STP10LN80K5 800 V 0.63 8 A Industry s lowest RDS(on) x area Industry s best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Swit

 9.2. Size:1627K  st
 stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf 

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch

 9.3. Size:384K  st
 stp10nk70z.pdf 

STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK70Z 700 V

 9.4. Size:901K  st
 std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf 

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

 9.5. Size:455K  st
 stp10nk80zfp stp10nk80z stw10nk80z.pdf 

STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V

 9.6. Size:460K  st
 stb100nf03l-03-1 stb100nf03l-03t4 stb100nf03l-03 stb100nf03l-03-1 stp100nf03l-03.pdf 

STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS(on) ID STB100NF03L-03 30V

 9.7. Size:339K  st
 stp10nb50 stp10nb50fp.pdf 

STP10NB50 STP10NB50FP N - CHANNEL 500V - 0.55 - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP10NB50 500 V

 9.8. Size:1657K  st
 stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf 

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS max ID PTOT 1 3 1 DPAK STB100N10F7 80 A 120 W D2PAK STD100N10F7 80 A 120W TAB 100 V 0.008 STF100N10F7 45 A 30 W STP100N10F7 80A 150 W

 9.9. Size:997K  st
 std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf 

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

 9.10. Size:1328K  st
 stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf 

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data TAB Features 3 Order codes VDS RDS(on) max ID PTOT 1 2 3 D PAK STB10N95K5 130 W 2 1 STF10N95K5 30 W TO-220FP 950 V 0.8 8 A STP10N95K5 TAB 130 W STW10N95K5 Worldwide best FOM

 9.11. Size:439K  st
 stp10nk80z stp10nk80zfp stw10nk80z.pdf 

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet production data Features TAB Type VDSS RDS(on) ID Pw STP10NK80Z 800V

 9.12. Size:1300K  st
 stb10n65k3 stfi10n65k3 stp10n65k3.pdf 

 9.13. Size:938K  st
 stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf 

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V

 9.14. Size:458K  st
 stp10nk80z.pdf 

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z 800 V

 9.15. Size:274K  st
 stp10nk70zfp stp10nk70z.pdf 

STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V

 9.16. Size:1072K  st
 std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf 

STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAK, TO-220 and IPAK packages Datasheet production data Features TAB TAB VDSS RDS(on) Order codes ID Pw @TJmax max. 3 1 3 STD10NM60N 70 W 3 2 2 1 DPAK 1 STF10NM60N 25 W I PAK TO-220FP STI10NM60N 650 V

 9.17. Size:525K  st
 std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf 

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V

 9.18. Size:813K  st
 stp105n3ll.pdf 

STP105N3LL N-channel 30 V, 2.7 m typ., 150 A, STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STP105N3LL 30 V 3.5 m 150 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 1 High avalanche ruggedness TO-220 Low gate drive power losses Applications S

 9.19. Size:395K  st
 stp10na40.pdf 

STP10NA40 STP10NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP10NA40 400 V

 9.20. Size:493K  st
 stp100n6f7.pdf 

STP100N6F7 N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP100N6F7 60 V 5.6 m 100A 125 W TAB Among the lowest RDS(on) on the market 3 Excellent figure of merit (FoM) 2 1 Low Crss/Ciss ratio for EMI immunity TO-220 High avalanche ruggedness Applicati

 9.21. Size:268K  st
 stp100nf04l.pdf 

STP100NF04L N-CHANNEL 40V - 0.0036 - 100A TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP100NF04L 40 V

 9.22. Size:948K  st
 stf10n62k3 stfi10n62k3 sti10n62k3 stp10n62k3.pdf 

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, I PAK, TO-220 packages Datasheet - production data Features RDS(on) Type VDSS max ID Pw 3 2 STF10N62K3 1 1 2 8.4 A(1) 30 W 3 TO-220FP STFI10N62K3 I PAKFP 620 V

 9.23. Size:503K  st
 stp10nk50z.pdf 

STP10NK50Z N-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 package Datasheet obsolete product Features Order code VDSS RDS(on) max ID PTOT TAB STP10NK50Z 500 V

 9.24. Size:398K  st
 stb100nf04 stp100nf04.pdf 

STP100NF04 STB100NF04 N-channel 40V - 0.0043 - 120A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID Pw STP100NF04 40V

 9.25. Size:1198K  st
 std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate char

 9.26. Size:1129K  st
 std10nm60nd stf10nm60nd stp10nm60nd.pdf 

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. jmax. STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

 9.27. Size:648K  st
 stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf 

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB TAB Features 2 3 1 VDS RDS(on) max. ID Order codes Package 3 1 D2PAK DPAK STB100N10F7 80 A D2PAK TAB TAB STD100N10F7 80 A DPAK STF100N10F7 100 V 8.0 m 45 A TO-220FP 3 3 2 3 1 2

 9.28. Size:528K  st
 stp10nk50z stf10nk50z.pdf 

STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STP10NK50Z 500 V

 9.29. Size:858K  st
 stb10nk60z stp10nk60z stw10nk60z.pdf 

STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V

 9.30. Size:149K  st
 stp10nc50fp stp10nc50.pdf 

STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48 - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NC50 500 V

 9.31. Size:718K  st
 stf10n105k5 stp10n105k5 stw10n105k5.pdf 

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DS D TOT max. STF10N105K5 30 W 3 3 2 2 1 STP10N105K5 1050 V 1.3 6 A 130 W 1 TO-220 STW10N105K5 130 W TO-220FP Industry s lowest RDS(on) 3 In

 9.32. Size:280K  st
 stp10nk70z stp10nk70zfp.pdf 

STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V

 9.33. Size:535K  st
 stp100n8f6.pdf 

STP100N8F6 N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on)max ID PTOT STP100N8F6 80 V 0.009 100A 176 W Very low on-resistance Very low gate charge 3 2 High avalanche ruggedness 1 Low gate drive power loss TO-220 Applications Switching applications F

 9.34. Size:684K  st
 stp10nk60z.pdf 

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65 -10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK60Z 600 V

 9.35. Size:951K  st
 std10nm50n stf10nm50n stp10nm50n.pdf 

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V

 9.36. Size:1300K  st
 stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf 

 9.37. Size:1525K  st
 std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max ID 3 1 STD10P6F6 3 2 DPAK STF10P6F6 1 60 V 0.16 10 A TO-220FP STP10P6F6 TAB STU10P6F6 TAB RDS(on) * Qg industry benchmark 3 2

 9.38. Size:182K  st
 stp10nb20.pdf 

STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NB20 200 V

 9.39. Size:938K  st
 stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf 

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V

 9.40. Size:348K  st
 stp10n80k5.pdf 

STP10N80K5 Datasheet N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220 package Features Order code VDS RDS(on ) max. ID PTOT TAB STP10N80K5 800 V 0.600 9 A 130 W Industry s lowest RDS(on) x area 3 2 Industry s best FoM (figure of merit) 1 TO-220 Ultra-low gate charge 100% avalanche tested Zener-protected D(2, TAB) Applications

 9.41. Size:205K  inchange semiconductor
 stp100n10f7.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP100N10F7 FEATURES Very low on-resistance Very low gate charge 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-

 9.42. Size:201K  inchange semiconductor
 stp10nk60zfp.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NK60ZFP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN

 9.43. Size:205K  inchange semiconductor
 stp105n3ll.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP105N3LL FEATURES Typical R (on)=0.0027 DS With low gate drive requirements High avalanche ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC &DC-CA converters Automotive environment ABSOLUTE

 9.44. Size:205K  inchange semiconductor
 stp10nm65n.pdf 

 9.45. Size:205K  inchange semiconductor
 stp100n8f6.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP100N8F6 FEATURES Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.46. Size:253K  inchange semiconductor
 stp10nk70zfp.pdf 

isc N-Channel MOSFET Transistor STP10NK70ZFP FEATURES Drain Current I = 8.6A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max)@V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so