Справочник MOSFET. STP10P6F6

 

STP10P6F6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STP10P6F6
   Маркировка: 10P6F6
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 6.4 nC
   trⓘ - Время нарастания: 5.3 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для STP10P6F6

 

 

STP10P6F6 Datasheet (PDF)

 ..1. Size:1198K  st
std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf

STP10P6F6
STP10P6F6

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID3STD10P6F613STF10P6F62DPAK-60 V 0.16 -10 A 1STP10P6F6TO-220FPSTU10P6F6TABTAB Very low on-resistance3 Very low gate char

 ..2. Size:1525K  st
std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf

STP10P6F6
STP10P6F6

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDSS RDS(on) max ID31STD10P6F632DPAKSTF10P6F6160 V 0.16 10 A TO-220FPSTP10P6F6TABSTU10P6F6TAB RDS(on) * Qg industry benchmark32

 9.1. Size:735K  st
stp10ln80k5.pdf

STP10P6F6
STP10P6F6

STP10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTP10LN80K5 800 V 0.63 8 A Industrys lowest RDS(on) x area Industrys best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Swit

 9.2. Size:1627K  st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf

STP10P6F6
STP10P6F6

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

 9.3. Size:384K  st
stp10nk70z.pdf

STP10P6F6
STP10P6F6

STP10NK70ZSTP10NK70ZFPN-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FPZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK70Z 700 V

 9.4. Size:901K  st
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf

STP10P6F6
STP10P6F6

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 9.5. Size:455K  st
stp10nk80zfp stp10nk80z stw10nk80z.pdf

STP10P6F6
STP10P6F6

STP10NK80ZFPSTP10NK80Z - STW10NK80ZN-channel 800V - 0.78 - 9A - TO-220/FP-TO-247Zener-protected superMESHTM MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP10NK80Z 800V

 9.6. Size:460K  st
stb100nf03l-03-1 stb100nf03l-03t4 stb100nf03l-03 stb100nf03l-03-1 stp100nf03l-03.pdf

STP10P6F6
STP10P6F6

STP100NF03L-03STB100NF03L-03 STB100NF03L-03-1N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NF03L-03 30V

 9.7. Size:339K  st
stp10nb50 stp10nb50fp.pdf

STP10P6F6
STP10P6F6

STP10NB50STP10NB50FPN - CHANNEL 500V - 0.55 - 10.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTP10NB50 500 V

 9.8. Size:1657K  st
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf

STP10P6F6
STP10P6F6

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W

 9.9. Size:997K  st
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf

STP10P6F6
STP10P6F6

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 9.10. Size:1328K  st
stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf

STP10P6F6
STP10P6F6

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247Datasheet - production dataTAB Features3Order codes VDS RDS(on) max ID PTOT123D PAK STB10N95K5 130 W21STF10N95K5 30 WTO-220FP950 V 0.8 8 ASTP10N95K5TAB130 WSTW10N95K5 Worldwide best FOM

 9.11. Size:439K  st
stp10nk80z stp10nk80zfp stw10nk80z.pdf

STP10P6F6
STP10P6F6

STP10NK80Z, STP10NK80ZFP,STW10NK80ZN-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packagesDatasheet production dataFeaturesTABType VDSS RDS(on) ID PwSTP10NK80Z 800V

 9.12. Size:1300K  st
stb10n65k3 stfi10n65k3 stp10n65k3.pdf

STP10P6F6
STP10P6F6

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 9.13. Size:938K  st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf

STP10P6F6
STP10P6F6

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V

 9.14. Size:458K  st
stp10nk80z.pdf

STP10P6F6
STP10P6F6

STP10NK80Z - STP10NK80ZFPSTW10NK80ZN-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK80Z 800 V

 9.15. Size:274K  st
stp10nk70zfp stp10nk70z.pdf

STP10P6F6
STP10P6F6

STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V

 9.16. Size:1072K  st
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf

STP10P6F6
STP10P6F6

STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V

 9.17. Size:525K  st
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf

STP10P6F6
STP10P6F6

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

 9.18. Size:813K  st
stp105n3ll.pdf

STP10P6F6
STP10P6F6

STP105N3LLN-channel 30 V, 2.7 m typ., 150 A, STripFET VI DeepGATEPower MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP105N3LL 30 V 3.5 m 150 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)321 High avalanche ruggednessTO-220 Low gate drive power lossesApplications S

 9.19. Size:395K  st
stp10na40.pdf

STP10P6F6
STP10P6F6

STP10NA40STP10NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP10NA40 400 V

 9.20. Size:493K  st
stp100n6f7.pdf

STP10P6F6
STP10P6F6

STP100N6F7N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTP100N6F7 60 V 5.6 m 100A 125 WTAB Among the lowest RDS(on) on the market3 Excellent figure of merit (FoM)21 Low Crss/Ciss ratio for EMI immunityTO-220 High avalanche ruggednessApplicati

 9.21. Size:268K  st
stp100nf04l.pdf

STP10P6F6
STP10P6F6

STP100NF04LN-CHANNEL 40V - 0.0036 - 100A TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP100NF04L 40 V

 9.22. Size:948K  st
stf10n62k3 stfi10n62k3 sti10n62k3 stp10n62k3.pdf

STP10P6F6
STP10P6F6

STF10N62K3, STFI10N62K3,STI10N62K3, STP10N62K3N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packagesDatasheet - production dataFeaturesRDS(on) Type VDSS max ID Pw32STF10N62K31128.4 A(1) 30 W3TO-220FPSTFI10N62K3IPAKFP620 V

 9.23. Size:503K  st
stp10nk50z.pdf

STP10P6F6
STP10P6F6

STP10NK50ZN-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 packageDatasheet obsolete productFeaturesOrder code VDSS RDS(on) max ID PTOTTABSTP10NK50Z 500 V

 9.24. Size:398K  st
stb100nf04 stp100nf04.pdf

STP10P6F6
STP10P6F6

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

 9.25. Size:1129K  st
std10nm60nd stf10nm60nd stp10nm60nd.pdf

STP10P6F6
STP10P6F6

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. jmax.STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

 9.26. Size:648K  st
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf

STP10P6F6
STP10P6F6

STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2

 9.27. Size:528K  st
stp10nk50z stf10nk50z.pdf

STP10P6F6
STP10P6F6

STP10NK50ZSTF10NK50ZN-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FPZener-Protected SuperMESHMOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP10NK50Z 500 V

 9.28. Size:858K  st
stb10nk60z stp10nk60z stw10nk60z.pdf

STP10P6F6
STP10P6F6

STB10NK60Z, STP10NK60ZSTW10NK60ZN-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFETZener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247FeaturesRDS(on) Type VDSS ID Pwmax3STB10NK60Z-1 600 V

 9.29. Size:149K  st
stp10nc50fp stp10nc50.pdf

STP10P6F6
STP10P6F6

STP10NC50STP10NC50FPN - CHANNEL 500V - 0.48 - 10A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP10NC50 500 V

 9.30. Size:718K  st
stf10n105k5 stp10n105k5 stw10n105k5.pdf

STP10P6F6
STP10P6F6

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TABR DS(on)Order codes V I P DS D TOTmax. STF10N105K5 30 W 33 22 1STP10N105K5 1050 V 1.3 6 A 130 W 1TO-220STW10N105K5 130 W TO-220FP Industrys lowest RDS(on) 3 In

 9.31. Size:280K  st
stp10nk70z stp10nk70zfp.pdf

STP10P6F6
STP10P6F6

STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V

 9.32. Size:535K  st
stp100n8f6.pdf

STP10P6F6
STP10P6F6

STP100N8F6N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesTABOrder code VDS RDS(on)max ID PTOTSTP100N8F6 80 V 0.009 100A 176 W Very low on-resistance Very low gate charge32 High avalanche ruggedness 1 Low gate drive power lossTO-220Applications Switching applicationsF

 9.33. Size:684K  st
stp10nk60z.pdf

STP10P6F6
STP10P6F6

STP10NK60Z/FP, STB10NK60Z/-1STW10NK60ZN-CHANNEL 600V-0.65-10A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK60Z 600 V

 9.34. Size:951K  st
std10nm50n stf10nm50n stp10nm50n.pdf

STP10P6F6
STP10P6F6

STD10NM50NSTF10NM50N, STP10NM50NN-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STD10NM50N1TO-220FP TO-220STF10NM50N 550 V

 9.35. Size:1300K  st
stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf

STP10P6F6
STP10P6F6

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 9.36. Size:182K  st
stp10nb20.pdf

STP10P6F6
STP10P6F6

STP10NB20STP10NB20FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP10NB20 200 V

 9.37. Size:938K  st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf

STP10P6F6
STP10P6F6

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V

 9.38. Size:348K  st
stp10n80k5.pdf

STP10P6F6
STP10P6F6

STP10N80K5DatasheetN-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220 packageFeaturesOrder code VDS RDS(on ) max. ID PTOTTABSTP10N80K5 800 V 0.600 9 A 130 W Industrys lowest RDS(on) x area32 Industrys best FoM (figure of merit)1TO-220 Ultra-low gate charge 100% avalanche tested Zener-protectedD(2, TAB)Applications

 9.39. Size:177K  stansontech
stp1013.pdf

STP10P6F6
STP10P6F6

STP1013 Dual P Channel Enhancement Mode MOSFET -0.45ADESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage appl

 9.40. Size:205K  inchange semiconductor
stp100n10f7.pdf

STP10P6F6
STP10P6F6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N10F7FEATURESVery low on-resistanceVery low gate charge100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-

 9.41. Size:201K  inchange semiconductor
stp10nk60zfp.pdf

STP10P6F6
STP10P6F6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NK60ZFPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN

 9.42. Size:205K  inchange semiconductor
stp105n3ll.pdf

STP10P6F6
STP10P6F6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP105N3LLFEATURESTypical R (on)=0.0027DSWith low gate drive requirementsHigh avalanche ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CA convertersAutomotive environmentABSOLUTE

 9.43. Size:205K  inchange semiconductor
stp10nm65n.pdf

STP10P6F6
STP10P6F6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NM65NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

 9.44. Size:205K  inchange semiconductor
stp100n8f6.pdf

STP10P6F6
STP10P6F6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 9.45. Size:253K  inchange semiconductor
stp10nk70zfp.pdf

STP10P6F6
STP10P6F6

isc N-Channel MOSFET Transistor STP10NK70ZFPFEATURESDrain Current : I = 8.6A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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