Справочник MOSFET. 2N6756JANTXV

 

2N6756JANTXV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N6756JANTXV

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 14 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 30 nC

Время нарастания (tr): 75 ns

Выходная емкость (Cd): 500 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm

Тип корпуса: TO3

Аналог (замена) для 2N6756JANTXV

 

 

2N6756JANTXV Datasheet (PDF)

4.1. 2n6756.pdf Size:136K _update-mosfet

2N6756JANTXV
2N6756JANTXV



4.2. 2n6756 irf130.pdf Size:147K _international_rectifier

2N6756JANTXV
2N6756JANTXV

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET?TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18? 14A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this

 5.1. 2n6758.pdf Size:141K _update-mosfet

2N6756JANTXV
2N6756JANTXV



5.2. 2n6757.pdf Size:141K _fairchild_semi

2N6756JANTXV
2N6756JANTXV

 5.3. 2n6759.pdf Size:138K _fairchild_semi

2N6756JANTXV
2N6756JANTXV

5.4. 2n6755.pdf Size:136K _fairchild_semi

2N6756JANTXV
2N6756JANTXV

 5.5. 2n6758 irf230.pdf Size:147K _international_rectifier

2N6756JANTXV
2N6756JANTXV

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET?TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40? 9.0A TO-3 The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing

5.6. 2n6753.pdf Size:11K _semelab

2N6756JANTXV

2N6753 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.7. 2n6751.pdf Size:12K _semelab

2N6756JANTXV

2N6751 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.8. 2n6754.pdf Size:11K _semelab

2N6756JANTXV

2N6754 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.9. 2n6753 2n6754.pdf Size:130K _inchange_semiconductor

2N6756JANTXV
2N6756JANTXV

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

5.10. 2n6751 2n6752.pdf Size:130K _inchange_semiconductor

2N6756JANTXV
2N6756JANTXV

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

Другие MOSFET... 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN , 2N6756JANTX , IRF9540 , 2N6756JTX , 2N6756JTXV , 2N6757 , 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV , 2N6758JTX .

 

 
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MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |
 

 

 

 

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