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IRFR3410PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR3410PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 37 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
   Тип корпуса: TO-252AA

 Аналог (замена) для IRFR3410PBF

 

 

IRFR3410PBF Datasheet (PDF)

 ..1. Size:231K  international rectifier
 irfr3410pbf irfu3410pbf.pdf

IRFR3410PBF IRFR3410PBF

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

 ..2. Size:231K  infineon
 irfr3410pbf irfu3410pbf.pdf

IRFR3410PBF IRFR3410PBF

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

 6.1. Size:140K  international rectifier
 irfr3410.pdf

IRFR3410PBF IRFR3410PBF

PD - 94505IRFR3410 IRFU3410HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3410 IRFU

 6.2. Size:1054K  cn evvo
 irfr3410.pdf

IRFR3410PBF IRFR3410PBF

IRFR3410N-Channel Enhancement Mode MOSFETDescriptionThe IRFR3410 uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This DSdevice is suitable for use as a GBattery protection or in other Switching application. TO-252-2LGeneral Features V = 100V I = 30A DS DPIN2 D R

 6.3. Size:822K  cn vbsemi
 irfr3410tr.pdf

IRFR3410PBF IRFR3410PBF

IRFR3410TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 6.4. Size:242K  inchange semiconductor
 irfr3410.pdf

IRFR3410PBF IRFR3410PBF

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410FEATURESStatic drain-source on-resistance:RDS(on)39mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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