IRFR4105PBF - описание и поиск аналогов

 ..1. Size:239K  international rectifier
 irfr4105pbf irfu4105pbf.pdf 

PD - 95550A IRFR4105PbF IRFU4105PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.045 G Description Fifth Generation HEXFETs from International Rectifier ID = 27A S utilize advanced processing techniques to achieve the lowest possible on-r

 6.1. Size:330K  international rectifier
 irfr4105zpbf irfu4105zpbf.pdf 

PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 24.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 30A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 6.2. Size:317K  international rectifier
 auirfr4105ztr.pdf 

PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

 6.3. Size:144K  international rectifier
 irfr4105.pdf 

PD - 91302C IRFR/U4105 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR4105) VDSS = 55V Straight Lead (IRFU4105) Fast Switching RDS(on) = 0.045 Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This

 6.4. Size:238K  international rectifier
 auirfr4105tr.pdf 

PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 45m Dynamic dV/dT Rating G ID (Silicon Limited) 27A 175 C Operating Temperature Fast Switching ID (Package Limited) 20A S Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free,

 6.5. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf 

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 6.6. Size:797K  cn vbsemi
 irfr4105ztr.pdf 

IRFR4105ZTR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 6.7. Size:241K  inchange semiconductor
 irfr4105z.pdf 

isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z FEATURES Static drain-source on-resistance RDS(on) 24.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55

 6.8. Size:241K  inchange semiconductor
 irfr4105.pdf 

isc N-Channel MOSFET Transistor IRFR4105, IIRFR4105 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-