STP3N80K5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP3N80K5
Маркировка: 3N80K5
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 2.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.5 nC
Время нарастания (tr): 7.5 ns
Выходная емкость (Cd): 14 pf
Сопротивление сток-исток открытого транзистора (Rds): 3.5 Ohm
Тип корпуса: TO-220
STP3N80K5 Datasheet (PDF)
std3n80k5 stf3n80k5 stp3n80k5 stu3n80k5.pdf
STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5N-channel 800 V, 2.8 typ., 2.5 A Zener-protected SuperMESH 5Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on)max ID PTOT31STD3N80K5 60 WDPAKSTF3N80K5 20 W3800 V 3.5 2.5 A21TABSTP3N80K560 WTO-220FPSTU3N80K5TAB TO-220 worldwide bes
stp3n80.pdf
STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V
stf3nk100z std3nk100z stp3nk100z.pdf
STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V
stf3nk100z stp3nk100z std3nk100z.pdf
STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V
stb3nk60zt4 std3nk60z-1 std3nk60zt4 stp3nk60z stp3nk60zfp.pdf
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4STP3NK60Z, STP3NK60ZFPDatasheetN-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packagesFeaturesTABTAB3VDS RDS(on) max. IDOrder codes Package2311D2PAKIPAKTABSTB3NK60ZT4D2PAK2 3TAB1STD3NK60Z-1 IPAKDPAK600 V 3.6 2.4 ASTD3NK60ZT4 DPAK3STP3NK60Z TO
stp3nb80 stp3nb80fp.pdf
STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V
stp3na90-.pdf
STP3NA90STP3NA90FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(o n) DSTP3NA90 900 V
stp3nk50z.pdf
STP3NK50ZN-channel 500 V, 2.8 typ., 2.3 A Zener-protected SuperMESH Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on)max. ID PTOTTABSTP3NK50Z 500 V 3.3 2.3 A 45 W Extremely high dv/dt capability ESD improved capability321 100% avalanche testedTO-220 Gate charge minimized Zener-protectedApplicatio
stp3na60.pdf
STP3NA60STP3NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3NA60 600 V
stp3na50.pdf
STP3NA50STP3NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP3NA50 500 V
std3nk90z stp3nk90z stp3nk90zfp.pdf
PCBSTD3NK90Z, STP3NK90Z, STP3NK90ZFPN-channel 900 V, 4.1 typ., 3 A Zener-protected SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packagesDatasheet - production dataFeaturesTABTAB2Order codes VDS RDS(on) ID PTOT 31STD3NK90ZT4390 W 2DPAK1STP3NK90Z 900 V 4.8 3 ATO-220STP3NK90ZFP 25 W Extremely high
stp3na80.pdf
STP3NA80STP3NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3NA80 800 V
std3nk80z std3nk80z-1 stf3nk80z stp3nk80z.pdf
STD3NK80Z, STD3NK80Z-1STF3NK80Z, STP3NK80ZN-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP3NK80Z 800 V
stp3n100.pdf
STP3N100STP3N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3N100 1000 V
stp3nb100.pdf
STP3NB100STP3NB100FPN-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP3NB100 1000 V
stp3nc60-fp.pdf
STP3NC60STP3NC60FPN-CHANNEL 600V - 3.3 - 3A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP3NC60 600 V
stp3nb80.pdf
STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V
stp3nc90z.pdf
STP3NC90Z - STP3NC90ZFPSTB3NC90Z-1N-CHANNEL 900V - 3.2 - 3.5A TO-220/TO-220FP/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP3NC90Z/FP 900V
stp3nc50.pdf
STP3NC50N-CHANNEL 500V - 3 - 2.8A TO-220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP3NC50 500 V
stp3nk60z.pdf
STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V
std3nk90zt4 stp3nk90zfp.pdf
STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V
stfw3n150 sth3n150-2 stp3n150 stw3n150.pdf
STFW3N150, STH3N150-2 STP3N150, STW3N150DatasheetN-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packagesFeaturesTABVDS RDS(on) max. ID PTOTOrder codes23 1 3STFW3N150 63 W22H PAK-21STH3N150-2TO-3PF1500 V 9 2.5 ASTP3N150 140 WTABSTW3N15033 100% avalanche tested2 2 1 1 TO-220
stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf
STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V
stp3nk90z stp3nk90zfp std3nk90z std3nk90z-1.pdf
STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V
stp3na90.pdf
STP3NA90STP3NA90FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP3NA90 900 V
stb3n62k3 std3n62k3 stf3n62k3 stp3n62k3 stu3n62k3.pdf
STB3N62K3, STD3N62K3, STF3N62K3STP3N62K3, STU3N62K3N-channel 620 V, 2.2 , 2.7 A SuperMESH3 Power MOSFETD2PAK, DPAK, TO-220FP, TO-220, IPAKFeaturesRDS(on) 33Type VDSS ID PD21max1DPAKSTB3N62K3 620 V
stp3nc70z.pdf
STP3NC70ZSTP3NC70ZFPN-CHANNEL 700V - 4.1 - 2.5A TO-220/TO-220FPZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP3NC70Z 700V
stp3nk60z stp3nk60zfp stb3nk60z std3nk60z std3nk60z-1.pdf
STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V
stp3nb90.pdf
STP3NB90STP3NB90FPN-CHANNEL 900V - 4 - 3.5 A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) ID PwSTP3NB90 900 V
std3nk80z-1 std3nk80zt4 stf3nk80z stp3nk80z.pdf
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. DSTD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capabil
stp3nb80-fp.pdf
STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V
stp3nb60.pdf
STP3NB60STP3NB60FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB60 600 V
std3nk90zt4 stp3nk90z stp3nk90zfp.pdf
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFPDatasheetN-channel 900 V, 3.6 typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packagesFeaturesTAB32VDS RDS(on) max. IDOrder code Package1DPAKSTD3NK90ZT4 DPAKTABSTP3NK90Z 900 V 4.8 3 A TO-220STP3NK90ZFP TO-220FP33 22 11TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested
stfw3n150 stp3n150 stw3n150.pdf
STFW3N150STP3N150, STW3N150N-channel 1500 V, 6 , 2.5 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesRDS(on) Type VDSS ID PTOTmax.STFW3N150 1500 V
stp3na100.pdf
STP3NA100STP3NA100FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3NA100 1000 V
stp3nk60zfp.pdf
STP3NK60ZFPwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoH
stp3n150.pdf
isc N-Channel MOSFET Transistor STP3N150FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
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