IXFK110N20 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXFK110N20
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 560 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 110 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 90 ns
Выходная емкость (Cd): 2200 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: TO264
Аналог (замена) для IXFK110N20
IXFK110N20 Datasheet (PDF)
ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf
This datasheet has been downloaded from http://www.digchip.com at this page
ixfk110n06 ixfk105n07 ixfk110n07.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFK 110 N06 60 V 110 A 6 mWPower MOSFETsIXFK 105 N07 70 V 105 A 7 mWIXFK 110 N07 70 V 110 A 6 mWN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)VDSS TJ = 25C to 150C N07 70 VN06 60 VVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VN06 60 VVGS Continuous 2
ixfh150n15p ixfk150n15p.pdf
IXFH 150N15PPolarHTTM HiPerFETVDSS = 150 VIXFK 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diodetrr 200 nsAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVGS Contin
ixfk150n30p3 ixfx150n30p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFK150N30P3Power MOSFETs ID25 = 150AIXFX150N30P3 RDS(on) 19m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 300 V TabVDGR TJ = 25C to 150
ixfk150n15 ixfx150n15.pdf
HiPerFETTM IXFK 150N15 VDSS = 150 VIXFX 150N15 ID25 = 150 APower MOSFETsRDS(on) = 12.5 mWSingle MOSFET Dietrr 250 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 MW 150 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capability) 150
ixfk160n30t ixfx160n30t.pdf
Advance Technical InformationGigaMOSTM VDSS = 300VIXFK160N30TID25 = 160APower MOSFETIXFX160N30T RDS(on) 19m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C, RGS = 1M 30
ixfk120n65x2 ixfx120n65x2.pdf
Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK120N65X2Power MOSFET ID25 = 120AIXFX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS
ixfk120n30p3 ixfx120n30p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFK120N30P3Power MOSFETs ID25 = 120AIXFX120N30P3 RDS(on) 27m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 300 V TabVDGR TJ = 25C to 150
ixfk100n65x2 ixfx100n65x2.pdf
Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK100N65X2Power MOSFET ID25 = 100AIXFX100N65X2 RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS
ixfk180n25t ixfx180n25t.pdf
Advance Technical InformationGigaMOSTM VDSS = 250VIXFK180N25TID25 = 180APower MOSFETIXFX180N25T RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VGVDGR TJ = 25C to 150C, RGS = 1M
ixfk120n25p ixfx120n25p.pdf
VDSS = 250 VIXFK 120N25PPolarHTTM HiPerFETID25 = 120 AIXFX 120N25PPower MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 250 VTO-264 (IXFK)VDGR TJ = 25C to 175C; RGS = 1 M 250 VVGS Continuous
ixfx100n25 ixfk100n25.pdf
IXFX 100N25 VDSS = 250 VHiPerFETTMIXFK 100N25 ID25 = 100 APower MOSFETsRDS(on) = 27 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET c
ixfk140n25t ixfx140n25t.pdf
Advance Technical InformationGigaMOSTM VDSS = 250VIXFK140N25TID25 = 140APower MOSFETIXFX140N25T RDS(on) 17m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VGDVDGR TJ = 25C to 150C, RGS = 1M
ixfk180n085 ixfx180n085.pdf
Advanced Technical InformationHiPerFETTM IXFK 180N085 VDSS = 85 VIXFX 180N085 ID25 = 180 APower MOSFETsRDS(on) = 7 mWSingle MOSFET Dietrr 250 nsSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capability) 1
ixfk100n10 ixfn150n10.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFK100N10 100 V 100 A 12 mWPower MOSFETsIXFN150N10 100 V 150 A 12 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 100 100 VG (TAB)VDGR TJ = 25C to 150C; RGS = 1 MW 100 100 V DSVGS Continuous 20 20 VminiBLOC, SOT
ixfk180n07 ixfx180n07.pdf
IXFK 180N07 VDSS = 70 VHiPerFETTMIXFX 180N07 ID25 = 180 APower MOSFETsRDS(on) = 6 mSingle MOSFET Die trr 250 ns Preliminary Data SheetSymbol Test Conditions Maximum Ratings PLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 M 70 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 2
ixfk170n10 ixfn170n10.pdf
VDSS ID25 RDS(on) trrHiPerFETTMIXFN170N10 100V 170A 10mW 200nsPower MOSFETIXFK170N10 100V 170A 10mW 200nsSingle MOSFET DieTO-264 AA (IXFK)Preliminary dataSymbol Test Conditions Maximum Ratings IXFK IXFN170N10 170N10GD (TAB)VDSS TJ = 25C to 150C 100 100 VDSVDGR TJ = 25C to 150C 100 100 VVGS Continuous 20 20 VVGSM Transient 30 30 VminiBLOC, SO
ixfk102n30p.pdf
Preliminary Technical InformationVDSS = 300 VIXFK 102N30PPolarHTTM HiPerFETID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS =
ixfk180n15p ixfx180n15p.pdf
VDSS = 150 VIXFK 180N15PPolarTM HiPerFETID25 = 180 AIXFX 180N15PPower MOSFET RDS(on) 11 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDS Continuous 20 VTO
ixfk100n25.pdf
IXFX 100N25 VDSS = 250 VHiPerFETTMIXFK 100N25 ID25 = 100 APower MOSFETsRDS(on) = 27 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET c
ixfh170n10p ixfk170n10p.pdf
PolarTM HiperFETTM VDSS = 100VIXFH170N10PID25 = 170APower MOSFETIXFK170N10P RDS(on) 9m trr 150nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C 100 V TabSVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSS Conti
ixfx120n20 ixfk120n20.pdf
HiPerFETTM IXFX 120N20 VDSS = 200 VIXFK 120N20 ID25 = 120 APower MOSFETsRDS(on) = 17 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V (TAB)GVGSM Transient 30 VDI
ixfk140n20p.pdf
VDSS = 200 VIXFK 140N20PPolarHTTMHiPerFETID25 = 140 APower MOSFET RDS(on) 18 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGS Continous 20 VV
ixfx170n20t ixfk170n20t.pdf
Advance Technical InformationGigaMOSTM VDSS = 200VIXFK170N20TID25 = 170APower MOSFETIXFX170N20T RDS(on) 11m trr 200nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 200 VD(TAB)SVDGR TJ = 25C to 175C, RGS =
ixfk120n30t ixfx120n30t.pdf
Advance Technical InformationGigaMOSTM VDSS = 300VIXFK120N30TID25 = 120APower MOSFETIXFX120N30T RDS(on) 24m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGDVDGR TJ = 25C to 150C, RGS = 1M
ixfk100n20 ixfn90n20 ixfn106n20.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t
ixfk180n10 ixfx180n10.pdf
HiPerFETTM IXFK 180N10 VDSS = 100 VIXFX 180N10 ID25 = 180 APower MOSFETsRDS(on) = 8 mWSingle MOSFET Dietrr 250 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDID25 TC = 25C (MOSFET chip capability) 180 A
ixfk180n07.pdf
isc N-Channel MOSFET Transistor IXFK180N07FEATURESDrain Current : I = 180A@ T =25D CDrain Source Voltage: V = 70V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Другие MOSFET... IXFH8N80 , IXFH9N80 , IXFJ13N50 , IXFJ32N50Q , IXFJ40N30 , IXFK100N10 , IXFK100N25 , IXFK110N07 , IRFB4110 , IXFK120N20 , IXFK150N10 , IXFK150N15 , IXFK170N10 , IXFK180N07 , IXFK180N085 , IXFK180N10 , IXFK20N80Q .
