Справочник MOSFET. IXFK180N07

 

IXFK180N07 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXFK180N07
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 560 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 420 nC
   trⓘ - Время нарастания: 90 ns
   Cossⓘ - Выходная емкость: 4600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO264

 Аналог (замена) для IXFK180N07

 

 

IXFK180N07 Datasheet (PDF)

 ..1. Size:80K  ixys
 ixfk180n07 ixfx180n07.pdf

IXFK180N07 IXFK180N07

IXFK 180N07 VDSS = 70 VHiPerFETTMIXFX 180N07 ID25 = 180 APower MOSFETsRDS(on) = 6 mSingle MOSFET Die trr 250 ns Preliminary Data SheetSymbol Test Conditions Maximum Ratings PLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 M 70 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 2

 ..2. Size:332K  inchange semiconductor
 ixfk180n07.pdf

IXFK180N07 IXFK180N07

isc N-Channel MOSFET Transistor IXFK180N07FEATURESDrain Current : I = 180A@ T =25D CDrain Source Voltage: V = 70V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 5.1. Size:46K  ixys
 ixfk180n085 ixfx180n085.pdf

IXFK180N07 IXFK180N07

Advanced Technical InformationHiPerFETTM IXFK 180N085 VDSS = 85 VIXFX 180N085 ID25 = 180 APower MOSFETsRDS(on) = 7 mWSingle MOSFET Dietrr 250 nsSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capability) 1

 6.1. Size:138K  ixys
 ixfk180n25t ixfx180n25t.pdf

IXFK180N07 IXFK180N07

Advance Technical InformationGigaMOSTM VDSS = 250VIXFK180N25TID25 = 180APower MOSFETIXFX180N25T RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VGVDGR TJ = 25C to 150C, RGS = 1M

 6.2. Size:178K  ixys
 ixfk180n15p ixfx180n15p.pdf

IXFK180N07 IXFK180N07

VDSS = 150 VIXFK 180N15PPolarTM HiPerFETID25 = 180 AIXFX 180N15PPower MOSFET RDS(on) 11 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDS Continuous 20 VTO

 6.3. Size:109K  ixys
 ixfk180n10 ixfx180n10.pdf

IXFK180N07 IXFK180N07

HiPerFETTM IXFK 180N10 VDSS = 100 VIXFX 180N10 ID25 = 180 APower MOSFETsRDS(on) = 8 mWSingle MOSFET Dietrr 250 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDID25 TC = 25C (MOSFET chip capability) 180 A

Другие MOSFET... IXFK100N10 , IXFK100N25 , IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 , IXFK150N15 , IXFK170N10 , K4145 , IXFK180N085 , IXFK180N10 , IXFK20N80Q , IXFK26N60Q , IXFK26N90 , IXFK27N80 , IXFK32N50Q , IXFK32N60 .

 

 
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