STU10N60M2 - Даташиты. Аналоги. Основные параметры

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

STU10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU10NA50 500 V

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

STU10NC70ZSTU10NC70ZIN-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU10NC70Z 700 V

STU10NB80N - CHANNEL 800V - 0.65 - 10A - Max220PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU10NB80 800 V

STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

STU10N20GreenProductSTD10N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.306 @ VGS=10VTO-252 and TO-251 Package.200V8A328 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABS

STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )