Справочник MOSFET. STU10N60M2

 

STU10N60M2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STU10N60M2
   Маркировка: 10N60M2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13.5 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: IPAK

 Аналог (замена) для STU10N60M2

 

 

STU10N60M2 Datasheet (PDF)

 ..1. Size:1627K  st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf

STU10N60M2
STU10N60M2

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

 8.1. Size:901K  st
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf

STU10N60M2
STU10N60M2

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 8.2. Size:73K  st
stu10na50.pdf

STU10N60M2
STU10N60M2

STU10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU10NA50 500 V

 8.3. Size:997K  st
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf

STU10N60M2
STU10N60M2

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 8.4. Size:409K  st
stu10nc70z.pdf

STU10N60M2
STU10N60M2

STU10NC70ZSTU10NC70ZIN-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU10NC70Z 700 V

 8.5. Size:44K  st
stu10nb80.pdf

STU10N60M2
STU10N60M2

STU10NB80N - CHANNEL 800V - 0.65 - 10A - Max220PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU10NB80 800 V

 8.6. Size:1072K  st
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf

STU10N60M2
STU10N60M2

STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V

 8.7. Size:525K  st
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf

STU10N60M2
STU10N60M2

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

 8.8. Size:523K  st
stu10nm65n.pdf

STU10N60M2
STU10N60M2

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

 8.9. Size:120K  samhop
stu10n20 std10n20.pdf

STU10N60M2
STU10N60M2

STU10N20GreenProductSTD10N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.306 @ VGS=10VTO-252 and TO-251 Package.200V8A328 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

 8.10. Size:128K  samhop
stu10n25 std10n25.pdf

STU10N60M2
STU10N60M2

STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABS

 8.11. Size:119K  samhop
stu10n10 std10n10.pdf

STU10N60M2
STU10N60M2

STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top