STU10P6F6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STU10P6F6
Маркировка: 10P6F6
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 6.4 nC
trⓘ - Время нарастания: 5.3 ns
Cossⓘ - Выходная емкость: 40 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: IPAK
STU10P6F6 Datasheet (PDF)
std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID3STD10P6F613STF10P6F62DPAK-60 V 0.16 -10 A 1STP10P6F6TO-220FPSTU10P6F6TABTAB Very low on-resistance3 Very low gate char
std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDSS RDS(on) max ID31STD10P6F632DPAKSTF10P6F6160 V 0.16 10 A TO-220FPSTP10P6F6TABSTU10P6F6TAB RDS(on) * Qg industry benchmark32
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
stu10na50.pdf
STU10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU10NA50 500 V
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
stu10nc70z.pdf
STU10NC70ZSTU10NC70ZIN-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU10NC70Z 700 V
stu10nb80.pdf
STU10NB80N - CHANNEL 800V - 0.65 - 10A - Max220PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU10NB80 800 V
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf
STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V
stu10nm65n.pdf
STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V
stu10n20 std10n20.pdf
STU10N20GreenProductSTD10N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.306 @ VGS=10VTO-252 and TO-251 Package.200V8A328 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (
stu102s std102s.pdf
STU102SGreenProductSTD102SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.566 @ VGS=10VTO-252 and TO-251 Package.100V 6A734 @ VGS=4.5VGGSSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)
stu10l01 std10l01.pdf
GrerrPPrPrProSTU/D10L01aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10A100V 213 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA
stu10n25 std10n25.pdf
STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABS
stu10n10 std10n10.pdf
STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918