Справочник MOSFET. IRFR540ZPBF

 

IRFR540ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR540ZPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 91 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 35 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 39 nC
   Время нарастания (tr): 42 ns
   Выходная емкость (Cd): 180 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0285 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IRFR540ZPBF

 

 

IRFR540ZPBF Datasheet (PDF)

 ..1. Size:353K  international rectifier
 irfr540zpbf irfu540zpbf.pdf

IRFR540ZPBF IRFR540ZPBF

PD - 96141BIRFR540ZPbFFeaturesIRFU540ZPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl 175C Operating TemperatureDl Fast SwitchingVDSS = 100Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-Freel Halogen-FreeRDS(on) = 28.5mGDescriptionID = 35AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achiev

 ..2. Size:856K  cn vbsemi
 irfr540zpbf.pdf

IRFR540ZPBF IRFR540ZPBF

IRFR540ZPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:285K  international rectifier
 auirfr540z auirfu540z.pdf

IRFR540ZPBF IRFR540ZPBF

AUTOMOTIVE GRADEAUIRFR540ZAUIRFU540ZHEXFET Power MOSFETVDSS 100VDDRDS(on) typ. 22.5mS max. 28.5m SDGGGID 35AD-Pak I-PakSAUIRFR540Z AUIRFU540ZApplicationsl Automatic Voltage Regulator (AVR) GDSl Solenoid Injection Gate Drain Sourcel Body Controll Low Power Automotive ApplicationsStandard PackBase part number Package Type Orderable Part Number

 6.2. Size:725K  infineon
 auirfr540z auirfu540z.pdf

IRFR540ZPBF IRFR540ZPBF

AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application VDSS 100V Automatic Voltage Regulator (AVR) RDS(on) typ. 22.5m Solenoid Injection Body Control max. 28.5m Low Power Automotive Applications ID 35A D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the lates

 6.3. Size:856K  cn vbsemi
 irfr540ztrpbf.pdf

IRFR540ZPBF IRFR540ZPBF

IRFR540ZTRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

 6.4. Size:242K  inchange semiconductor
 irfr540z.pdf

IRFR540ZPBF IRFR540ZPBF

isc N-Channel MOSFET Transistor IRFR540Z, IIRFR540ZFEATURESStatic drain-source on-resistance:RDS(on)28.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Ga

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