IRFS244 - описание и поиск аналогов

 ..1. Size:225K  fairchild semi
 irfs244.pdf 

IRFS244 FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10.2 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.214 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 0.1. Size:675K  1
 irfs244b.pdf 

November 2001 IRFS244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.2A, 250V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 47 nC) planar, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast

 0.2. Size:207K  1
 irfs244a.pdf 

 8.1. Size:688K  1
 irfs240b.pdf 

November 2001 IRFS240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 200V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fast

 8.2. Size:287K  1
 irfs240 irfs241.pdf 

 8.3. Size:262K  1
 irfs240a.pdf 

IRFS240A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 12.8 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo