Справочник MOSFET. IRFS3004-7PPBF

 

IRFS3004-7PPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS3004-7PPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 380 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 240 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 160 nC
   trⓘ - Время нарастания: 240 ns
   Cossⓘ - Выходная емкость: 2020 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00125 Ohm
   Тип корпуса: TO-263CA-7

 Аналог (замена) для IRFS3004-7PPBF

 

 

IRFS3004-7PPBF Datasheet (PDF)

 ..1. Size:487K  international rectifier
irfs3004-7ppbf.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

PD - 97378AIRFS3004-7PPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.0.90ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.25mGID (Silicon Limited)400ABenefitsID (Package Limited) 240A Sl Improved Gate, Avalanche and Dynamic dV/dt

 ..2. Size:487K  infineon
irfs3004-7ppbf.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

PD - 97378AIRFS3004-7PPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.0.90ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.25mGID (Silicon Limited)400ABenefitsID (Package Limited) 240A Sl Improved Gate, Avalanche and Dynamic dV/dt

 3.1. Size:453K  infineon
auirfs3004-7p.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.90m Ultra Low On-Resistance 175C Operating Temperature max. 1.25m Fast Switching ID (Silicon Limited) 400A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Q

 6.1. Size:457K  international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 6.2. Size:457K  infineon
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 6.3. Size:711K  infineon
auirfs3004 auirfsl3004.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.4m Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching ID (Silicon Limited) 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant

 6.4. Size:252K  inchange semiconductor
irfs3004.pdf

IRFS3004-7PPBF
IRFS3004-7PPBF

isc N-Channel MOSFET Transistor IRFS3004FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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