IRFS33N15DPBF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFS33N15DPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 170 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 60 nC
trⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.056 Ohm
Тип корпуса: TO-263
IRFS33N15DPBF Datasheet (PDF)
irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf

PD- 95537IRFB33N15DPbF IRFS33N15DPbFSMPS MOSFET IRFSL33N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.056 33Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc
irfb33n15dpbf irfs33n15dpbf.pdf

PD- 95537IRFB33N15DPbF IRFS33N15DPbFSMPS MOSFET IRFSL33N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.056 33Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc
irfs33n15d.pdf

PD- 93903IRFB33N15D IRFS33N15DSMPS MOSFET IRFSL33N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.056 33ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
irfb33n15d irfs33n15d irfsl33n15d.pdf

PD- 93903IRFB33N15D IRFS33N15DSMPS MOSFET IRFSL33N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.056 33ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HSP80P10 | TSD5N65M | MTN3607E3 | NTR4170NT1G | STS9P2UH7 | FQU10N20TU
History: HSP80P10 | TSD5N65M | MTN3607E3 | NTR4170NT1G | STS9P2UH7 | FQU10N20TU



Список транзисторов
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