STB11N65M5 datasheet, аналоги, основные параметры
Наименование производителя: STB11N65M5 📄📄
Маркировка: 11N65M5
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 5 V
Qg ⓘ - Общий заряд затвора: 17 nC
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 18 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
Тип корпуса: D2PAK
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Аналог (замена) для STB11N65M5
- подборⓘ MOSFET транзистора по параметрам
STB11N65M5 даташит
..1. Size:1017K st
stb11n65m5 std11n65m5 stf11n65m5 stp11n65m5.pdf 
STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, D PAK, TO-220FP and TO-220 packages Features TAB TAB 3 2 VDS @ 3 1 1 RDS(on)max. ID Order code DPAK 2 D PAK Tjmax. TAB STB11N65M5 STD11N65M5 710 V 0.48 9 A 3 2 3 1 STF11N65M5 2 1 TO-220 TO-220FP STP11N65M5 D(2, TAB) Extremel
..2. Size:1276K st
stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf 
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V
8.1. Size:943K st
stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf 
STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features RDS(on) Type VDSS RDS(on)*Qg ID max 3 1 3 STB11NM80 2 D PAK 1 STF11NM80 TO-247 800 V
8.2. Size:1155K st
stb11n52k3 stf11n52k3 stp11n52k3.pdf 
STB11N52K3, STF11N52K3 STP11N52K3 N-channel 525 V, 0.41 , 10 A SuperMESH3 Power MOSFET in D PAK,TO-220FP and TO-220 packages Datasheet production data Features TAB RDS(on) Order codes VDSS max. ID Pw STB11N52K3 125 W 3 3 2 2 1 1 STF11N52K3 525 V
8.3. Size:624K st
stb11nm60t4 stp11nm60.pdf 
STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in D PAK and TO-220 packages Features VDSS TAB RDS(on) max. ID TAB Order codes Package (@ TJmax) STB11NM60T4 D PAK 3 650 V 0.45 11 A 1 3 2 STP11NM60 TO-220 D PAK TO-220 2 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2
8.4. Size:388K st
stp11nm60a stp11nm60afp stb11nm60a-1.pdf 
STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V
8.5. Size:486K st
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf 
STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V
8.6. Size:493K st
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf 
STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V
8.7. Size:632K st
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf 
STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45
8.8. Size:632K st
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf 
STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45
8.9. Size:904K st
stb11nm80t4 sti11nm80.pdf 
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET in D PAK, TO-220FP, I PAK, TO-220, TO-247 Features RDS(on) Order codes VDSS RDS(on)*Qg ID max 3 3 1 2 STB11NM80 1 D PAK TO-220FP STF11NM80 STI11NM80 800 V
8.10. Size:635K st
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf 
STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45
8.11. Size:501K st
stb11nk40z stp11nk40zfp stp11nk40z.pdf 
STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 , 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) ID Pw STB11NK40Z 400V
8.12. Size:580K st
stp11nk40z stp11nk40zfp stb11nk40z.pdf 
STP11NK40Z - STP11NK40ZFP STB11NK40Z N-CHANNEL 400V - 0.49 - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP11NK40Z 400 V
8.13. Size:904K st
stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf 
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET in D PAK, TO-220FP, I PAK, TO-220, TO-247 Features RDS(on) Order codes VDSS RDS(on)*Qg ID max 3 3 1 2 STB11NM80 1 D PAK TO-220FP STF11NM80 STI11NM80 800 V
8.14. Size:360K st
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf 
STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 3 2 2 1 1 STP11NM60 650V
8.15. Size:413K st
stb11nk50z stp11nk50zfp stp11nk50z.pdf 
STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features RDS(on) Type VDSS ID Pw max STB11NK50Z 500 V
8.16. Size:102K st
stb11nb40.pdf 
STB11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE VDSS RDS(on) ID STB11NB40 400 V
8.17. Size:367K st
stp11nm60 stp11nm60fp stb11nm60 stb11nm60-1.pdf 
STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 3 2 2 1 1 STP11NM60 650V
8.18. Size:408K st
stb11nk50zt4.pdf 
STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features RDS(on) Type VDSS ID Pw max STB11NK50Z 500 V
8.19. Size:500K st
stb11nk40zt4.pdf 
STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 , 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) ID Pw STB11NK40Z 400V
8.20. Size:539K st
stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf 
STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@TJmax) Max 3 2 3 1 2 STI11NM65N 710 V
8.21. Size:203K inchange semiconductor
stb11nm60fd.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB11NM60FD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
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