STB12NM60N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STB12NM60N
Маркировка: B12NM60N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 30.5 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 65 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.41 Ohm
Тип корпуса: D2PAK
Аналог (замена) для STB12NM60N
STB12NM60N Datasheet (PDF)
stb12nm60n-1 stb12nm60n stf12nm60n stp12nm60n stw12nm60n.pdf
STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf
STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
stb12nm50fdt4 stp12nm50fd stw14nm50fd.pdf
STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
stp12nm50 stp12nm50fp stb12nm50 stb12nm50-1.pdf
STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V
stb12nm50nd std12nm50nd stf12nm50nd.pdf
STB12NM50NDSTD12NM50ND, STF12NM50NDN-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET(with fast diode) in D2PAK, DPAK, TO-220FPFeatures Type VDSS (@Tjmax) RDS(on) max IDSTB12NM50ND 550 V 0.38 11 ASTD12NM50ND 550 V 0.38 11 ASTF12NM50ND 550 V 0.38 11 A33 3211 1 100% avalanche testedD2PAK DPAK TO-220FP Low input capacitance and gate charge
stb12nm50t4 stp12nm50 stp12nm50fp.pdf
STB12NM50T4, STP12NM50, STP12NM50FPDatasheetN-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packagesFeaturesTABVDS RDS(on) max. IDOrder codes312D PAK3STB12NM50T421TO-220FPTAB STP12NM50 500 V 350 m 12 ASTP12NM50FP32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate inp
stb12nm50t4 stp12nm50fp.pdf
STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V
stb12nm50-1.pdf
STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V
stb12nm50fd stp12nm50fd-fp stw14nm50fd.pdf
STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918