STB4NK60ZT4 - Даташиты. Аналоги. Основные параметры

STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4DatasheetN-channel 600 V, 1.7 typ., 4 A SuperMESH Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packagesFeaturesTABTABOrder codes VDS RDS(on) max. PTOT ID31322 STB4NK60Z-12 1D PAKI PAKSTB4NK60ZT4600 V 2 70 W 4 ATABTABSTD4NK60Z-132312STD4NK60ZT41DPAKIPAK Extremely high dv/dt

STB4NK60Z, STB4NK60Z-1, STD4NK60ZSTD4NK60Z-1, STP4NK60Z,STP4NK60ZFPN-channel 600 V, 1.76 , 4 A SuperMESH Power MOSFETin DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FPFeaturesRDS(on) Type VDSS PW ID 332max3 1121STB4NK60Z 600 V

STB4NK60Z, STB4NK60Z-1, STD4NK60ZSTD4NK60Z-1, STP4NK60Z,STP4NK60ZFPN-channel 600 V - 1.76 - 4 A SuperMESH Power MOSFETDPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FPFeaturesRDS(on) Type VDSS PW ID 332max3 1121STB4NK60Z 600 V

STB4NC50N-CHANNEL 500V - 2.2 - 4A D2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTB4NC50 500V

STB4NB80N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB4NB80 800 V 3.3 4 ASTB4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES3 GATE CHARGE MINIMIZED3211DESCRIPTION D2PAK I2PAKUsing the latest high voltage

STB4NC60N-CHANNEL 600V - 1.8 - 4.2A D2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTB4NC60 600V

STP4NC80Z - STP4NC80ZFPSTB4NC80Z - STB4NC80Z-1N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP4NC80Z/FP 800V

STB4NB50N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAKPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB4NB50 500 V

STB4N62K3, STF4N62K3STI4N62K3, STP4N62K3N-channel 620 V, 1.8 , 3.8 A SuperMESH3 Power MOSFETD2PAK, TO-220FP, I2PAK, TO-220Preliminary dataFeaturesRDS(on) Type VDSS ID Pwmax33311STB4N62K3 70 W 21DPAKSTF4N62K3 25 WTO-220FP620 V

STB4N62K3STD4N62K3N-channel 620 V, 1.7 , 3.8 A SuperMESH3 Power MOSFETDPAK, DPAKFeaturesOrder codes VDSS RDS(on) max ID PwSTB4N62K3620 V