IRFS4510PBF - описание и поиск аналогов

PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.3m l Uninterruptible Power Supply l High Speed Power Switching G max. 13.9m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 61A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l

Isc N-Channel MOSFET Transistor IRFS4510 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

IRFS450A FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.6 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.308 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte

November 2001 IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 87 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast

isc N-Channel MOSFET Transistor IRFS450A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose appl