IRFS654B - аналоги, параметры транзистора - Справочник транзисторов

IRFS654B даташит

..1. Size:868K fairchild semi
irfs654b.pdf pdf_icon

7.1. Size:515K samsung
irfs654a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 12 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

8.1. Size:261K 1
irfs650a.pdf pdf_icon

IRFS650A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sym

8.2. Size:266K international rectifier
auirfs6535 auirfsl6535.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 Features HEXFET Power MOSFET Advanced Process Technology D Low On-Resistance V(BR)DSS 300V 175 C Operating Temperature RDS(on) typ. 148m Fast Switching G max. 185m Repetitive Avalanche Allowed up to Tjmax S ID 19A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically designed