IRFSL4321PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFSL4321PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 330 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 83 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 71 nC
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 390 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TO-262
Аналог (замена) для IRFSL4321PBF
IRFSL4321PBF Datasheet (PDF)
irfs4321pbf irfsl4321pbf.pdf
PD - 97105CIRFS4321PbFIRFSL4321PbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:Benefits85A cIDl Low RDSON Reduces Lossesl Low Gate Charge Improves the SwitchingD PerformanceDD
irfsl4321.pdf
Isc N-Channel MOSFET Transistor IRFSL4321FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 15
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf
PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf
PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
auirfs4310 auirfsl4310.pdf
AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au
irfsl4310 .pdf
isc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
irfsl4310.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C