Справочник MOSFET. IRFU120NPBF

 

IRFU120NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFU120NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 48 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 9.4 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 25 nC

Время нарастания (tr): 23 ns

Выходная емкость (Cd): 92 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.21 Ohm

Тип корпуса: TO-251

Аналог (замена) для IRFU120NPBF

 

 

IRFU120NPBF Datasheet (PDF)

1.1. irfu120npbf.pdf Size:390K _upd

IRFU120NPBF
IRFU120NPBF

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

2.1. irfu120n.pdf Size:261K _inchange_semiconductor

IRFU120NPBF
IRFU120NPBF

isc N-Channel MOSFET Transistor IRFU120N ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UN

 3.1. irfu120zpbf.pdf Size:318K _upd

IRFU120NPBF
IRFU120NPBF

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 190mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r

3.2. irfu1205pbf.pdf Size:393K _upd

IRFU120NPBF
IRFU120NPBF

PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Tr

 3.3. irfu120pbf.pdf Size:2013K _upd

IRFU120NPBF
IRFU120NPBF

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.27 • Repetitive Avalanche Rated Qg (Max.) (nC) 16 • Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel Q

3.4. irfr120a irfu120a.pdf Size:256K _fairchild_semi

IRFU120NPBF
IRFU120NPBF

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Rating

 3.5. irfr120pbf irfu120pbf.pdf Size:1326K _international_rectifier

IRFU120NPBF
IRFU120NPBF

PD- 95523A IRFR120PbF IRFU120PbF Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF Document Number: 91266 www.vishay.com 5 IRFR/U120PbF Document Number: 91266 www.vishay.com 6 IRFR/U120PbF

3.6. irfr120 irfu120 sihfr120 sihfu120.pdf Size:1989K _vishay

IRFU120NPBF
IRFU120NPBF

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Qgd (nC) 7.7 F

3.7. irfu1205.pdf Size:260K _inchange_semiconductor

IRFU120NPBF
IRFU120NPBF

isc N-Channel MOSFET Transistor IRFU1205 ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UN

3.8. irfu120.pdf Size:301K _inchange_semiconductor

IRFU120NPBF
IRFU120NPBF

isc N-Channel MOSFET Transistor IRFU120 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.27Ω ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power factor correction ·Switched mode power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

3.9. irfu120z.pdf Size:261K _inchange_semiconductor

IRFU120NPBF
IRFU120NPBF

isc N-Channel MOSFET Transistor IRFU120Z ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UN

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