IRFU4105ZPBF - описание и поиск аналогов

PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 24.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 30A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

isc N-Channel MOSFET Transistor IRFU4105Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

PD - 95550A IRFR4105PbF IRFU4105PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.045 G Description Fifth Generation HEXFETs from International Rectifier ID = 27A S utilize advanced processing techniques to achieve the lowest possible on-r

isc N-Channel MOSFET Transistor IRFU4105 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source Volt