IRFU420B - описание и поиск аналогов

November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

PD - 95078A IRFR420PbF IRFU420PbF Lead-Free 1/7/05 Document Number 91275 www.vishay.com 1 IRFR/U420PbF Document Number 91275 www.vishay.com 2 IRFR/U420PbF Document Number 91275 www.vishay.com 3 IRFR/U420PbF Document Number 91275 www.vishay.com 4 IRFR/U420PbF Document Number 91275 www.vishay.com 5 IRFR/U420PbF Document Number 91275 www.vishay.com 6 IRFR/U420

PD - 95075A SMPS MOSFET IRFR420APbF IRFU420APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 3.0 3.3A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitanc

IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche Rated Qg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 Available in Tap

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac

IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420) Qg (Max.) (nC) 19 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 17 Fully Characterized Capacitance and Qgs (nC) 4.3 Avalanche Voltage and Current Qgd (nC) 8.5

isc N-Channel MOSFET Transistor IRFU420 FEATURES Drain Current I = 2.4A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos