Справочник MOSFET. IRFU5305PBF

 

IRFU5305PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFU5305PBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 63 nC
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 520 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для IRFU5305PBF

 

 

IRFU5305PBF Datasheet (PDF)

 ..1. Size:244K  international rectifier
irfu5305pbf.pdf

IRFU5305PBF
IRFU5305PBF

PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie

 ..2. Size:244K  infineon
irfr5305pbf irfu5305pbf.pdf

IRFU5305PBF
IRFU5305PBF

PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie

 6.1. Size:528K  infineon
auirfr5305 auirfu5305.pdf

IRFU5305PBF
IRFU5305PBF

AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dv/dt Rating ID -31A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D

 9.1. Size:353K  international rectifier
irfr540zpbf irfu540zpbf.pdf

IRFU5305PBF
IRFU5305PBF

PD - 96141BIRFR540ZPbFFeaturesIRFU540ZPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl 175C Operating TemperatureDl Fast SwitchingVDSS = 100Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-Freel Halogen-FreeRDS(on) = 28.5mGDescriptionID = 35AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achiev

 9.2. Size:371K  international rectifier
irfu540z.pdf

IRFU5305PBF
IRFU5305PBF

APPROVEDPD - TBDAUTOMOTIVE MOSFETIRFR540ZIRFU540ZFeatureslAdvanced Process TechnologyHEXFET Power MOSFETlUltra Low On-ResistanceDl175C Operating TemperatureVDSS = 100VlFast SwitchinglRepetitive Avalanche Allowed up to TjmaxRDS(on) = 28.5mGDescriptionID = 35ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the l

 9.3. Size:267K  international rectifier
irfr5410pbf irfu5410pbf.pdf

IRFU5305PBF
IRFU5305PBF

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 9.4. Size:1399K  international rectifier
irfr5505pbf irfu5505pbf.pdf

IRFU5305PBF
IRFU5305PBF

PD - 95077AIRFR5505PbFIRFU5505PbF Lead-Freewww.irf.com 11/10/05IRFR/U5505PbF2 www.irf.comIRFR/U5505PbFwww.irf.com 3IRFR/U5505PbF4 www.irf.comIRFR/U5505PbFwww.irf.com 5IRFR/U5505PbF6 www.irf.comIRFR/U5505PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

 9.5. Size:285K  international rectifier
auirfr540z auirfu540z.pdf

IRFU5305PBF
IRFU5305PBF

AUTOMOTIVE GRADEAUIRFR540ZAUIRFU540ZHEXFET Power MOSFETVDSS 100VDDRDS(on) typ. 22.5mS max. 28.5m SDGGGID 35AD-Pak I-PakSAUIRFR540Z AUIRFU540ZApplicationsl Automatic Voltage Regulator (AVR) GDSl Solenoid Injection Gate Drain Sourcel Body Controll Low Power Automotive ApplicationsStandard PackBase part number Package Type Orderable Part Number

 9.6. Size:532K  international rectifier
auirfu5505 auirfr5505.pdf

IRFU5305PBF
IRFU5305PBF

AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

 9.7. Size:113K  infineon
irfr5505 irfu5505.pdf

IRFU5305PBF
IRFU5305PBF

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

 9.8. Size:267K  infineon
irfr5410pbf irfu5410pbf.pdf

IRFU5305PBF
IRFU5305PBF

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 9.9. Size:270K  infineon
irfr5505pbf irfu5505pbf.pdf

IRFU5305PBF
IRFU5305PBF

PD - 95077BIRFR5505PbFIRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012

 9.10. Size:725K  infineon
auirfr540z auirfu540z.pdf

IRFU5305PBF
IRFU5305PBF

AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application VDSS 100V Automatic Voltage Regulator (AVR) RDS(on) typ. 22.5m Solenoid Injection Body Control max. 28.5m Low Power Automotive Applications ID 35A D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the lates

 9.11. Size:840K  cn vbsemi
irfu5505pbf.pdf

IRFU5305PBF
IRFU5305PBF

IRFU5505PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

 9.12. Size:261K  inchange semiconductor
irfu540z.pdf

IRFU5305PBF
IRFU5305PBF

isc N-Channel MOSFET Transistor IRFU540ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 9.13. Size:246K  inchange semiconductor
irfu5410.pdf

IRFU5305PBF
IRFU5305PBF

isc P-Channel MOSFET Transistor IRFU5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -100

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