STC4539. Аналоги и основные параметры
Наименование производителя: STC4539
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: SOP-8
Аналог (замена) для STC4539
- подборⓘ MOSFET транзистора по параметрам
STC4539 даташит
stc4539.pdf
STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application
stc4545.pdf
STC4545 30V N & P Pair Enhancement Mode MOSFET DESCRIPTION FEATURE The STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m (typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m (typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe
stc4567.pdf
STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su
stc4516.pdf
STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8 P Channel Top View -30V/-7.2A
Другие MOSFET... IRFU420PBF , IRFU430APBF , IRFU4510PBF , IRFU4615PBF , IRFU4620PBF , IRFU48ZPBF , IRFU5305PBF , STC4516 , IRF740 , STC4545 , STC4567 , STC4606 , STC4614 , STC6332 , STC6602 , STC6614 , STD100N03LT4 .
History: IPA60R280P7
History: IPA60R280P7
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