STD11N65M2 - Аналоги. Основные параметры
Наименование производителя: STD11N65M2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 85
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 7.5
ns
Cossⓘ - Выходная емкость: 20
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.67
Ohm
Тип корпуса:
DPAK
Аналог (замена) для STD11N65M2
-
подбор ⓘ MOSFET транзистора по параметрам
STD11N65M2 технические параметры
..1. Size:1172K st
std11n65m2 stp11n65m2 stu11n65m2.pdf 

STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 7 A 2 1 STU11N65M2 TO-220 TAB Extremely low gate charge Lower RDS(on) x area vs previous generation
5.1. Size:1017K st
stb11n65m5 std11n65m5 stf11n65m5 stp11n65m5.pdf 

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, D PAK, TO-220FP and TO-220 packages Features TAB TAB 3 2 VDS @ 3 1 1 RDS(on)max. ID Order code DPAK 2 D PAK Tjmax. TAB STB11N65M5 STD11N65M5 710 V 0.48 9 A 3 2 3 1 STF11N65M5 2 1 TO-220 TO-220FP STP11N65M5 D(2, TAB) Extremel
5.2. Size:717K st
std11n65m5.pdf 

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 N-channel 650 V, 0.43 , 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB 2 2 3 VDSS @ RDS(on) 3 Order code ID 1 1 TJmax max DPAK D2PAK STB11N65M5 STD11N65M5 TAB 710 V
8.1. Size:1258K st
std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf 

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 typ., 11 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAKFP and TO-220 packages Datasheet - production data Features TAB VDSS @ RDS(on) 3 Order codes ID 1 TJmax max 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V
8.2. Size:632K st
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf 

STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45
8.3. Size:632K st
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf 

STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45
8.4. Size:1258K st
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf 

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 typ., 11 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAKFP and TO-220 packages Datasheet - production data Features TAB VDSS @ RDS(on) 3 Order codes ID 1 TJmax max 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V
8.5. Size:635K st
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf 

STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45
8.6. Size:678K st
std11nm50n stf11nm50n stp11nm50n.pdf 

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 , 9 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Features RDS(on) Type VDSS @TJmax ID 3 max 1 3 STD11NM50N 2 DPAK 1 STF11NM50N 550 V
8.7. Size:750K st
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf 

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I PAK STI11NM60ND 650 V
8.8. Size:986K st
std11n50m2 stf11n50m2 stf11n50m2.pdf 

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 8 A STF11N50M2 TAB Extremely low gate charge 3 1 Lower RDS(on) x area vs previous generation 3 DPAK 2 Low gate input resistance 1
8.9. Size:760K st
std11n50m2 stf11n50m2.pdf 

STD11N50M2, STF11N50M2 Datasheet N-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packages Features VDS @ TJmax RDS(on)max. ID Order code Package TAB STD11N50M2 DPAK 3 550 V 0.53 8 A 2 STF11N50M2 TO-220FP 1 3 2 1 Extremely low gate charge DPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen
8.10. Size:262K inchange semiconductor
std11nm50n.pdf 

Isc N-Channel MOSFET Transistor STD11NM50N FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
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