STD35P6LLF6 - описание и поиск аналогов

STD35P6LLF6 P-channel 60 V, 0.025 typ., 35 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DSS DS(on) D TOT STD35P6LLF6 60 V 0.028 35 A 70 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1 Internal schematic diagram Applications

STD35P6LLF6 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete

STD35NF3LL N-channel 30V - 0.014 - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD35NF3LL 30V

STD35NF06L N-channel 60 V, 0.014 , 35 A STripFET II Power MOSFET in a DPAK package Datasheet production data Features Order code VDSS RDS(on) ID TAB STD35NF06LT4 60V

STD35N3LH5 N-channel 30 V, 14 m , 35 A, DPAK STripFET V Power MOSFET Preliminary data Features RDS(on) Type VDSS ID max STD35N3LH5 30 V

STD35NF3LL N-channel 30V - 0.014 - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD35NF3LL 30V

STD35NF06 N-channel 60V - 0.018 - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD35NF06 60V

STD35NF06 N-channel 60V - 0.018 - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD35NF06 60V

STD35NF06L N-channel 60V - 0.014 - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD35NF06L 60V

STU35N10 Green Product STD35N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 21 @ VGS=10V TO-252 and TO-251 Package. 100V 35A 30 @ VGS=4.5V G S STU SERIES STD SERIES ( ) ( ) TO - 252AA D- PAK TO -

Green Product STU/D35L01A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 35A 20 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

re r r P Pr Pr Pro STU/D35L01 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 35A 100V 24 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I

Gre r r P Pr Pr Pro STU/D35L01HA a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 35A 20 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

STD35NF06LT4 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

STD35NF06T4 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise