STD35P6LLF6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STD35P6LLF6
Маркировка: 35P6LLF6
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 70 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 30 nC
Время нарастания (tr): 39 ns
Выходная емкость (Cd): 262 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: DPAK
Аналог (замена) для STD35P6LLF6
STD35P6LLF6 Datasheet (PDF)
std35p6llf6.pdf
STD35P6LLF6 P-channel 60 V, 0.025 typ., 35 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DSS DS(on) D TOTSTD35P6LLF6 60 V 0.028 35 A 70 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications
std35p6llf6.pdf
STD35P6LLF6www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete
std35nf3ll.pdf
STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V
std35nf06lt4.pdf
STD35NF06LN-channel 60 V, 0.014 , 35 A STripFET II Power MOSFET in a DPAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) IDTABSTD35NF06LT4 60V
std35n3lh5.pdf
STD35N3LH5N-channel 30 V, 14 m, 35 A, DPAKSTripFET V Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS IDmaxSTD35N3LH5 30 V
std35nf3llt4.pdf
STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V
std35nf06t4.pdf
STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V
std35nf06.pdf
STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V
std35nf06l.pdf
STD35NF06LN-channel 60V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06L 60V
stu35n10 std35n10.pdf
STU35N10GreenProductSTD35N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.21 @ VGS=10VTO-252 and TO-251 Package.100V 35A30 @ VGS=4.5V GSSTU SERIES STD SERIES( ) ( )TO - 252AA D- PAK TO -
stu35l01a std35l01a.pdf
GreenProductSTU/D35L01AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 35A 20 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA
stu35l01 std35l01.pdf
rerrPPrPrProSTU/D35L01aS mHop Microelectronics C orp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.35A100V 24 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I
stu35l01ha std35l01ha.pdf
GrerrPPrPrProSTU/D35L01HAaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 35A 20 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251
std35nf06lt4.pdf
STD35NF06LT4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim
std35nf06t4.pdf
STD35NF06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
