STF10P6F6 - описание и поиск аналогов

 ..1. Size:1198K  st
 std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate char

 ..2. Size:1525K  st
 std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max ID 3 1 STD10P6F6 3 2 DPAK STF10P6F6 1 60 V 0.16 10 A TO-220FP STP10P6F6 TAB STU10P6F6 TAB RDS(on) * Qg industry benchmark 3 2

 9.1. Size:901K  st
 std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf 

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

 9.2. Size:1657K  st
 stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf 

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS max ID PTOT 1 3 1 DPAK STB100N10F7 80 A 120 W D2PAK STD100N10F7 80 A 120W TAB 100 V 0.008 STF100N10F7 45 A 30 W STP100N10F7 80A 150 W

 9.3. Size:997K  st
 std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf 

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

 9.4. Size:1328K  st
 stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf 

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data TAB Features 3 Order codes VDS RDS(on) max ID PTOT 1 2 3 D PAK STB10N95K5 130 W 2 1 STF10N95K5 30 W TO-220FP 950 V 0.8 8 A STP10N95K5 TAB 130 W STW10N95K5 Worldwide best FOM

 9.5. Size:837K  st
 stf10n80k5 stfu10n80k5.pdf 

 9.6. Size:1072K  st
 std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf 

STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAK, TO-220 and IPAK packages Datasheet production data Features TAB TAB VDSS RDS(on) Order codes ID Pw @TJmax max. 3 1 3 STD10NM60N 70 W 3 2 2 1 DPAK 1 STF10NM60N 25 W I PAK TO-220FP STI10NM60N 650 V

 9.7. Size:525K  st
 std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf 

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V

 9.8. Size:1058K  st
 stf10n60m2.pdf 

STF10N60M2, STFI10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features RDS(on) Order codes VDS @ TJmax max ID STF10N60M2 650 V 0.6 7.5 A STFI10N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 1 2 2 1 3 Low gate input resistance 2 T

 9.9. Size:948K  st
 stf10n62k3 stfi10n62k3 sti10n62k3 stp10n62k3.pdf 

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, I PAK, TO-220 packages Datasheet - production data Features RDS(on) Type VDSS max ID Pw 3 2 STF10N62K3 1 1 2 8.4 A(1) 30 W 3 TO-220FP STFI10N62K3 I PAKFP 620 V

 9.10. Size:1129K  st
 std10nm60nd stf10nm60nd stp10nm60nd.pdf 

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. jmax. STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

 9.11. Size:648K  st
 stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf 

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB TAB Features 2 3 1 VDS RDS(on) max. ID Order codes Package 3 1 D2PAK DPAK STB100N10F7 80 A D2PAK TAB TAB STD100N10F7 80 A DPAK STF100N10F7 100 V 8.0 m 45 A TO-220FP 3 3 2 3 1 2

 9.12. Size:528K  st
 stp10nk50z stf10nk50z.pdf 

STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STP10NK50Z 500 V

 9.13. Size:718K  st
 stf10n105k5 stp10n105k5 stw10n105k5.pdf 

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DS D TOT max. STF10N105K5 30 W 3 3 2 2 1 STP10N105K5 1050 V 1.3 6 A 130 W 1 TO-220 STW10N105K5 130 W TO-220FP Industry s lowest RDS(on) 3 In

 9.14. Size:951K  st
 std10nm50n stf10nm50n stp10nm50n.pdf 

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V

 9.15. Size:1300K  st
 stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf 

 9.16. Size:571K  st
 stf10n80k5.pdf 

STF10N80K5 N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STF10N80K5 800 V 0.600 9 A 30 W Industry s best RDS(on) 3 2 Industry s best figure of merit (FoM) 1 Ultra-low gate charge TO-220FP 100% avalanche tested Zener-protected Applications F

 9.17. Size:247K  inchange semiconductor
 stf10nm60nd.pdf 

isc N-Channel MOSFET Transistor STF10NM60ND FEATURES Drain-source on-resistance RDS(on) 0.6 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.18. Size:201K  inchange semiconductor
 stf10nm65n.pdf