Справочник MOSFET. IRFZ30PBF

 

IRFZ30PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ30PBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток (Uds): 50 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 30 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 26 nC

Время нарастания (tr): 16 ns

Выходная емкость (Cd): 550 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для IRFZ30PBF

 

 

IRFZ30PBF Datasheet (PDF)

1.1. irfz30pbf.pdf Size:425K _update

IRFZ30PBF
IRFZ30PBF



5.1. irfz34pbf.pdf Size:1559K _update

IRFZ30PBF
IRFZ30PBF

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.050 RoHS* • Fast Switching Qg (Max.) (nC) 46 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

5.2. irfz34l irfz34s.pdf Size:375K _update

IRFZ30PBF
IRFZ30PBF

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.050 • Surface Mount Qg (Max.) (nC) 46 • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature Qgs (nC) 11 • Fast Switching Qgd (nC) 22

 5.3. irfz34npbf.pdf Size:179K _update

IRFZ30PBF
IRFZ30PBF

PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Ease of Paralleling ID = 29A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o

5.4. irfz34epbf.pdf Size:1901K _update

IRFZ30PBF
IRFZ30PBF

PD - 94789 IRFZ34EPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Ease of Paralleling RDS(on) = 0.042Ω l Lead-Free G Description ID = 28A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest p

 5.5. irfz34nlpbf irfz34nspbf.pdf Size:296K _update

IRFZ30PBF
IRFZ30PBF

PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET® Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.040Ω l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

5.6. irfz34pbf.pdf Size:2027K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 94944 IRFZ34PbF Lead-Free 01/14/04 Document Number: 91290 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290 www.vishay.com 5 IRFZ34PbF Document Number: 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline Dime

5.7. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier

IRFZ30PBF

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5.8. irfz34e.pdf Size:120K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 9.1672A IRFZ34E HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.042? Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per s

5.9. irfz34vs.pdf Size:128K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m? G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to

5.10. irfz34v.pdf Size:104K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 28m? G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

5.11. irfz34.pdf Size:171K _international_rectifier

IRFZ30PBF
IRFZ30PBF

5.12. irfz34s.pdf Size:302K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 9.892A IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

5.13. irfz34n.pdf Size:104K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.040? Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per si

5.14. irfz34ns.pdf Size:161K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040? Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

5.15. irfz34s-l.pdf Size:193K _international_rectifier

IRFZ30PBF
IRFZ30PBF

PD - 9.892A IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

5.16. irfz34a.pdf Size:500K _samsung

IRFZ30PBF
IRFZ30PBF

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

5.17. irfz34 sihfz34.pdf Size:1556K _vishay

IRFZ30PBF
IRFZ30PBF

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) (?)VGS = 10 V 0.050 RoHS* Fast Switching Qg (Max.) (nC) 46 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

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MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |
 

 

 

 

 

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