IRFZ30PBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFZ30PBF Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRFZ30PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 26 nC
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 550 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: TO-220AB

Аналог (замена) для IRFZ30PBF

- подбор ⓘ MOSFET транзистора по параметрам

IRFZ30PBF Datasheet (PDF)

..1. Size:425K international rectifier
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8.1. Size:425K 1
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9.1. Size:42K 1
irfz12 irfz15 irfz25 irfz35 irfz45.pdf pdf_icon

9.2. Size:43K international rectifier
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9.3. Size:263K international rectifier
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PD - 97621AUTOMOTIVE GRADEAUIRFZ34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.040Gl Fast Switchingl Fully Avalanche RatedS ID29Al Repetitive Avalanche Allowed upto Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescription

9.4. Size:296K international rectifier
irfz34nspbf irfz34nlpbf.pdf pdf_icon

PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

9.5. Size:109K international rectifier
irfz34n.pdf pdf_icon

PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance

9.6. Size:171K international rectifier
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9.7. Size:296K international rectifier
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9.8. Size:120K international rectifier
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PD - 9.1672AIRFZ34EHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Ease of ParallelingID = 28ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistanc

9.9. Size:128K international rectifier
irfz34vs irfz34vl.pdf pdf_icon

PD - 94180IRFZ34VSIRFZ34VL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 60V 175C Operating Temperature Fast Switching Fully Avalanche RatedRDS(on) = 28mG Optimized for SMPS ApplicationsDescriptionID = 30AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techn

9.10. Size:302K international rectifier
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PD - 9.892AIRFZ34S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175C Operating Temperature RDS(on) = 0.050 Fast SwitchingGID = 30ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

9.11. Size:179K international rectifier
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PD - 94807IRFZ34NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible o

9.12. Size:1901K international rectifier
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PD - 94789IRFZ34EPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Ease of ParallelingRDS(on) = 0.042l Lead-FreeGDescriptionID = 28AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieve thelowest p

9.13. Size:161K international rectifier
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PD - 9.1311AIRFZ34NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040 Fast SwitchingG Fully Avalanche RatedID = 29ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

9.14. Size:193K international rectifier
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9.15. Size:2027K international rectifier
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PD - 94944IRFZ34PbF Lead-Free01/14/04Document Number: 91290 www.vishay.com1IRFZ34PbFDocument Number: 91290 www.vishay.com2IRFZ34PbFDocument Number: 91290 www.vishay.com3IRFZ34PbFDocument Number: 91290 www.vishay.com4IRFZ34PbFDocument Number: 91290 www.vishay.com5IRFZ34PbFDocument Number: 91290 www.vishay.com6IRFZ34PbFTO-220AB Package Outline

9.16. Size:104K international rectifier
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PD - 94042IRFZ34VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28mG Fast Switching Fully Avalanche RatedID = 30A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ach

9.17. Size:500K samsung
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Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating TemperatureA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

9.18. Size:1556K vishay
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IRFZ34, SiHFZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.050RoHS* Fast SwitchingQg (Max.) (nC) 46COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.19. Size:375K vishay
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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.050 Surface MountQg (Max.) (nC) 46 Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) 175 C Operating TemperatureQgs (nC) 11 Fast SwitchingQgd (nC) 22

9.20. Size:1559K vishay
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9.21. Size:2679K cn vbsemi
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IRFZ34NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

9.22. Size:1177K cn vbsemi
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IRFZ34NSTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

9.23. Size:258K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFZ34NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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