IRFZ46ZSPBF - описание и поиск аналогов

 ..1. Size:375K  international rectifier
 irfz46zpbf irfz46zspbf irfz46zlpbf.pdf 

PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6m G Lead-Free Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

 ..2. Size:375K  international rectifier
 irfz46zlpbf irfz46zpbf irfz46zspbf.pdf 

PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6m G Lead-Free Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

 6.1. Size:258K  inchange semiconductor
 irfz46zs.pdf 

Isc N-Channel MOSFET Transistor IRFZ46ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.1. Size:246K  inchange semiconductor
 irfz46z.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46Z IIRFZ46Z FEATURES Static drain-source on-resistance RDS(on) 13.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 8.1. Size:333K  international rectifier
 irfz46l.pdf 

PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175 C Operating Temperature RDS(on) = 0.024 Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

 8.2. Size:245K  international rectifier
 auirfz46nl.pdf 

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175 C Operating Temperature l Fast Switching RDS(on) max. 16.5m l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

 8.3. Size:149K  international rectifier
 irfz46ns irfz46nl.pdf 

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.0165 Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie

 8.4. Size:85K  international rectifier
 irfz46n.pdf 

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5m G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

 8.5. Size:154K  international rectifier
 irfz46.pdf 

Document Number 90372 www.vishay.com 1283 Document Number 90372 www.vishay.com 1284 Document Number 90372 www.vishay.com 1285 Document Number 90372 www.vishay.com 1286 Document Number 90372 www.vishay.com 1287 Document Number 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

 8.6. Size:358K  international rectifier
 irfz46s.pdf 

PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175 C Operating Temperature RDS(on) = 0.024 Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

 8.7. Size:215K  international rectifier
 irfz46npbf.pdf 

PD - 94952A IRFZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m G l Fully Avalanche Rated l Lead-Free ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 8.8. Size:679K  international rectifier
 irfz46nlpbf.pdf 

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165 Lead-Free G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing t

 8.9. Size:245K  international rectifier
 auirfz46ns.pdf 

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175 C Operating Temperature l Fast Switching RDS(on) max. 16.5m l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

 8.10. Size:105K  njs
 irfz46.pdf 

 8.11. Size:856K  cn vbsemi
 irfz46ns.pdf 

IRFZ46NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

 8.12. Size:246K  inchange semiconductor
 irfz46n.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46N IIRFZ46N FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 8.13. Size:258K  inchange semiconductor
 irfz46ns.pdf 

isc N-Channel MOSFET Transistor IRFZ46NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S