Справочник MOSFET. IRFZ48NPBF

 

IRFZ48NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ48NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 130 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 64 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 81 nC

Время нарастания (tr): 78 ns

Выходная емкость (Cd): 470 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для IRFZ48NPBF

 

 

IRFZ48NPBF Datasheet (PDF)

1.1. irfz48npbf.pdf Size:226K _update

IRFZ48NPBF
IRFZ48NPBF

PD - 94991B IRFZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 14mΩ G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

3.1. irfz48nlpbf.pdf Size:301K _update

IRFZ48NPBF
IRFZ48NPBF

 IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET® Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014Ω Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

3.2. irfz48n 1.pdf Size:53K _philips

IRFZ48NPBF
IRFZ48NPBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

 3.3. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48NPBF
IRFZ48NPBF

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

3.4. irfz48n.pdf Size:102K _international_rectifier

IRFZ48NPBF
IRFZ48NPBF

PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

 3.5. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ48NPBF
IRFZ48NPBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

3.6. irfz48ns.pdf Size:251K _inchange_semiconductor

IRFZ48NPBF
IRFZ48NPBF

isc N-Channel MOSFET Transistor IRFZ48NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

3.7. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48NPBF
IRFZ48NPBF

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top