IRFZ48RL - Даташиты. Аналоги. Основные параметры

PD - 95761IRFZ48RSPbFIRFZ48RLPbFl Advanced Process Technology HEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.018l Drop in Replacement of the IRFZ48Gfor Linear/Audio ApplicationsID = 50*Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

PD - 93958IRFZ48RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.018G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ48 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

IRFZ48RSPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc