Справочник MOSFET. IRFZ48RL

 

IRFZ48RL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFZ48RL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 190 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 250 ns
   Cossⓘ - Выходная емкость: 1300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IRFZ48RL

 

 

IRFZ48RL Datasheet (PDF)

 ..1. Size:262K  international rectifier
 irfz48rspbf irfz48rlpbf.pdf

IRFZ48RL IRFZ48RL

PD - 95761IRFZ48RSPbFIRFZ48RLPbFl Advanced Process Technology HEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.018l Drop in Replacement of the IRFZ48Gfor Linear/Audio ApplicationsID = 50*Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier

 ..2. Size:228K  vishay
 irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf

IRFZ48RL IRFZ48RL

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

 ..3. Size:203K  vishay
 irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf

IRFZ48RL IRFZ48RL

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

 7.1. Size:136K  international rectifier
 irfz48r.pdf

IRFZ48RL IRFZ48RL

PD - 93958IRFZ48RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.018G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ48 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

 7.2. Size:1059K  vishay
 irfz48r sihfz48r.pdf

IRFZ48RL IRFZ48RL

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

 7.3. Size:1061K  vishay
 irfz48r irfz48rpbf sihfz48r.pdf

IRFZ48RL IRFZ48RL

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

 7.4. Size:901K  cn vbsemi
 irfz48rsp.pdf

IRFZ48RL IRFZ48RL

IRFZ48RSPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top