STF6NM60N - описание и поиск аналогов

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V

STF6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF6N90K5 900 V 1.10 6 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications

STF6N95K5 N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF6N95K5 950 V 1.25 9 A 25 W Industry s lowest RDS(on) * area Industry s best figure of merit (FoM) 3 2 1 Ultra-low gate charge 100% avalanche tested TO-220FP Zener-protected Applications

STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF6N80K5 800 V 1.6 4.5 A 25 W STFI6N80K5 3 2 1 1 Industry s lowest RDS(on) 2 3 TO-220FP 2 Industry s best figure of merit (FoM) I PAKFP Ultra low gate charge 10

STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STF6N65M2 3 3 STP6N65M2 650 V 1.35 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB Extremely low gate charge Excellent output capacitance (COSS) profile 3 2 1

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 4.5 A TO-220FP TAB STU6N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous

STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK Datasheet production data Features Order codes VDSS RDS(on) max. ID Ptot STF6N65K3 TAB 30 W STFI6N65K3 650 V

STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, I PAK, TO-220, IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max. ID PTOT 3 3 STF6N62K3 30 W 2 2 1 1 STFI6N62K3 30 W TO-220FP I PAK STI6N62K3 620 V

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V

STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5 - 5A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP6NK70Z 700 V

STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3 Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V

STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I PAK STF6N62K3 30 W 3 STI6N62K3 620 V

STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 , 5 A, D PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V

STF6N60M2 www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy rated (UIS) Qgd (nC) 2.7 Configuratio

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STF6N95K5 FEATURES drain-source on-resistance RDS(on) 1.25 (max) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

isc N-Channel MOSFET Transistor STF6N90K5 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole