Справочник MOSFET. IXFR12N100Q

 

IXFR12N100Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXFR12N100Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 315 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.05 Ohm
   Тип корпуса: TO247

 Аналог (замена) для IXFR12N100Q

 

 

IXFR12N100Q Datasheet (PDF)

 ..1. Size:33K  ixys
 ixfr10n100q ixfr12n100q.pdf

IXFR12N100Q IXFR12N100Q

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100Q 1000 V 10 A 1.05 WISOPLUS247TM Q CLASSIXFR 10N100Q 1000 V 9 A 1.20 W(Electrically Isolated Back Surface) trr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 1000 V

 4.1. Size:97K  ixys
 ixfr10n100f ixfr12n100f.pdf

IXFR12N100Q IXFR12N100Q

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TMIXFR 10N100F 1000 V 9 A 1.20 F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol

 8.1. Size:74K  ixys
 ixfr120n20.pdf

IXFR12N100Q IXFR12N100Q

IXFR 120N20 VDSS = 200 VHiPerFETTM Power MOSFETsID25 = 105 AISOPLUS247TMRDS(on) = 17 m(Electrically Isolated Back Surface) trr 250 ns Single MOSFET DiePreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VGVGS Continuo

 9.1. Size:152K  ixys
 ixfr180n15p.pdf

IXFR12N100Q IXFR12N100Q

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ

 9.2. Size:33K  ixys
 ixfr180n10.pdf

IXFR12N100Q IXFR12N100Q

HiPerFETTM Power MOSFETsIXFR 180N10 VDSS = 100 VISOPLUS247TMID25 = 165 A(Electrically Isolated Back Surface) RDS(on)= 8 mWtrr 250 nsSingle MOSFET DiePreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VGVGSM Transient 30 VDIsolated back surface*ID25

 9.3. Size:57K  ixys
 ixfr180n085.pdf

IXFR12N100Q IXFR12N100Q

HiPerFETTM Power MOSFETsIXFR 180N085 VDSS = 85 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 7 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25C

 9.4. Size:32K  ixys
 ixfr180n07.pdf

IXFR12N100Q IXFR12N100Q

HiPerFETTM Power MOSFETsIXFR 180N07 VDSS = 70 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 6 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 MW 70 VGVGS Continuous 20 VDVGSM Transient 30 VIsolated back surface*ID

 9.5. Size:151K  ixys
 ixfr102n30p.pdf

IXFR12N100Q IXFR12N100Q

VDSS = 300 VIXFR 102N30PPolarHTTM HiPerFETID25 = 60 APower MOSFET RDS(on) 36 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 150 C 300 VE153432VDGR TJ = 25 C to 1

 9.6. Size:32K  ixys
 ixfr15n80q.pdf

IXFR12N100Q IXFR12N100Q

HiPerFETTM Power MOSFETsIXFR 15N80Q VDSS = 800 VISOPLUS247TM Q ClassID25 = 13 ARDS(on) = 0.60 W(Electrically Isolated Back Surface)N-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V

 9.7. Size:139K  ixys
 ixfr140n20p.pdf

IXFR12N100Q IXFR12N100Q

VDSS = 200 VIXFR 140N20PPolarHTTM HiPerFETID25 = 90 APower MOSFET RDS(on) 22 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 200 VE153432VDGR

Другие MOSFET... IXFN50N50 , IXFN55N50 , IXFN60N60 , IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , 10N60 , IXFR15N80Q , IXFR180N07 , IXFR180N085 , IXFR180N10 , IXFR24N100 , IXFR24N50 , IXFR24N50Q , IXFR26N50 .

 

 
Back to Top