IRF1018ESLPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF1018ESLPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 79 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0084 Ohm
Тип корпуса: TO-262
Аналог (замена) для IRF1018ESLPBF
IRF1018ESLPBF Datasheet (PDF)
irf1018epbf irf1018eslpbf irf1018espbf.pdf
PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl
irf1018epbf irf1018espbf irf1018eslpbf.pdf
PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl
auirf1018es.pdf
AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo
irf1018es.pdf
Isc N-Channel MOSFET Transistor IRF1018ESFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
auirf1018e.pdf
International Rectifier Product Detail Page Page 1 of 2Part Se AUIRF1018EPart: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageDescription:Support Docs: N/A Commercial Datasheet Reliability ReportAutomotive MarketIR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact
irf1018e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1018EIIRF1018EFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918