IRF130, IRF131,S E M I C O N D U C T O RIRF132, IRF13312A and 14A, 80V and 100V, 0.16 and 0.23 Ohm,October 1997 N-Channel Power MOSFETsFeatures Description 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.16 and 0.23MOSFETs designed, tested, and guaranteed to withstand a

PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua

PD - 97263BIRF1324S-7PPbFHEXFET Power MOSFETDApplicationsVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.0.8ml Uninterruptible Power Supply max. 1.0ml High Speed Power Switching GID (Silicon Limited)429Al Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

PD - 96199AIRF1324PbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.2ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited)353AID (Package Limited)S 195A Benefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,

PD - 97353AIRF1324SPbFIRF1324LPbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.65ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 340AID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynami

PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1324IIRF1324FEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM