IRF1324LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF1324LPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 195 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 190 ns
Cossⓘ - Выходная емкость: 3440 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00165 Ohm
Тип корпуса: TO-262
Аналог (замена) для IRF1324LPBF
IRF1324LPBF Datasheet (PDF)
irf1324lpbf irf1324spbf.pdf
PD - 97353AIRF1324SPbFIRF1324LPbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.65ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 340AID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynami
auirf1324s auirf1324l.pdf
AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-
auirf1324strl.pdf
PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua
irf1324s-7ppbf.pdf
PD - 97263BIRF1324S-7PPbFHEXFET Power MOSFETDApplicationsVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.0.8ml Uninterruptible Power Supply max. 1.0ml High Speed Power Switching GID (Silicon Limited)429Al Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
irf1324pbf.pdf
PD - 96199AIRF1324PbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.2ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited)353AID (Package Limited)S 195A Benefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness
auirf1324s-7p.pdf
AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description
irf1324pbf.pdf
PD - 96199AIRF1324PbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.2ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited)353AID (Package Limited)S 195A Benefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness
auirf1324wl.pdf
PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,
auirf1324.pdf
PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe
irf1324.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1324IIRF1324FEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918